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TMS320VC5507 датащи(PDF) 72 Page - Texas Instruments |
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TMS320VC5507 датащи(HTML) 72 Page - Texas Instruments |
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72 / 108 page ![]() Setup = 2 Strobe = 5 Not Ready = 2 Hold = 1 Extended Hold = 2 M17 CLKOUT † CEx‡ BEx A[20:0] § D[15:0] AOE ARE AWE ARDY M3 M4 M7 M6 M8 M9 M10 M18 M3 M4 M15 M16 M5 † CLKOUT is equal to CPU clock ‡ CEx becomes active depending on the memory address space being accessed § A[13:0] for LQFP SM320VC5507-EP SPRS613 – SEPTEMBER 2009 www.ti.com Figure 5-7. Asynchronous Memory Write Timings 5.7.2 Synchronous DRAM (SDRAM) Timings Table 5-9 and Table 5-10 assume testing over recommended operating conditions (see Figure 5-8 through Figure 5-14). Table 5-9. Synchronous DRAM Cycle Timing Requirements CVDD = 1.2 V CVDD = 1.6 V CVDD = 1.35 V NO. UNIT MIN MAX MIN MAX M19 tsu (DV–CLKMEMH) Setup time, read data valid before CLKMEM high 3 3 ns M20 th (CLKMEMH–DV) Hold time, read data valid after CLKMEM high 2 2 ns M21 tc (CLKMEM) Cycle time, CLKMEM 9.26(1) 7.52(2) ns (1) Maximum SDRAM operating frequency = 108 MHz. Actual attainable maximum operating frequency will depend on the quality of the PC board design and the memory chip timing requirement. (2) Maximum SDRAM operating frequency = 133 MHz. Actual attainable maximum operating frequency will depend on the quality of the PC board design and the memory chip timing requirement. Table 5-10. Synchronous DRAM Cycle Switching Characteristics CVDD = 1.2 V CVDD = 1.6 V CVDD = 1.35 V NO. UNIT MIN MAX MIN MAX M22 td (CLKMEMH–CEL) Delay time, CLKMEM high to CEx low 1.2 7 1.2 5 ns M23 td (CLKMEMH–CEH) Delay time, CLKMEM high to CEx high 1.2 7 1.2 5 ns M24 td (CLKMEMH–BEV) Delay time, CLKMEM high to BEx valid 1.2 7 1.2 5 ns 72 Electrical Specifications Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): SM320VC5507-EP |
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