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TMS320VC5507 датащи(PDF) 72 Page - Texas Instruments

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номер детали TMS320VC5507
подробное описание детали  Fixed-Point Digital Signal Processor
PDF  108 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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TMS320VC5507 датащи(HTML) 72 Page - Texas Instruments

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Setup = 2
Strobe = 5
Not Ready = 2
Hold = 1
Extended
Hold = 2
M17
CLKOUT †
CEx‡
BEx
A[20:0] §
D[15:0]
AOE
ARE
AWE
ARDY
M3
M4
M7
M6
M8
M9
M10
M18
M3
M4
M15
M16
M5
† CLKOUT is equal to CPU clock
‡ CEx becomes active depending on the memory address space being accessed
§ A[13:0] for LQFP
SM320VC5507-EP
SPRS613 – SEPTEMBER 2009
www.ti.com
Figure 5-7. Asynchronous Memory Write Timings
5.7.2
Synchronous DRAM (SDRAM) Timings
Table 5-9 and Table 5-10 assume testing over recommended operating conditions (see Figure 5-8 through
Figure 5-14).
Table 5-9. Synchronous DRAM Cycle Timing Requirements
CVDD = 1.2 V
CVDD = 1.6 V
CVDD = 1.35 V
NO.
UNIT
MIN
MAX
MIN
MAX
M19
tsu (DV–CLKMEMH)
Setup time, read data valid before CLKMEM high
3
3
ns
M20
th (CLKMEMH–DV)
Hold time, read data valid after CLKMEM high
2
2
ns
M21
tc (CLKMEM)
Cycle time, CLKMEM
9.26(1)
7.52(2)
ns
(1)
Maximum SDRAM operating frequency = 108 MHz. Actual attainable maximum operating frequency will depend on the quality of the PC
board design and the memory chip timing requirement.
(2)
Maximum SDRAM operating frequency = 133 MHz. Actual attainable maximum operating frequency will depend on the quality of the PC
board design and the memory chip timing requirement.
Table 5-10. Synchronous DRAM Cycle Switching Characteristics
CVDD = 1.2 V
CVDD = 1.6 V
CVDD = 1.35 V
NO.
UNIT
MIN
MAX
MIN
MAX
M22
td (CLKMEMH–CEL)
Delay time, CLKMEM high to CEx low
1.2
7
1.2
5
ns
M23
td (CLKMEMH–CEH)
Delay time, CLKMEM high to CEx high
1.2
7
1.2
5
ns
M24
td (CLKMEMH–BEV)
Delay time, CLKMEM high to BEx valid
1.2
7
1.2
5
ns
72
Electrical Specifications
Copyright © 2009, Texas Instruments Incorporated
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Product Folder Link(s): SM320VC5507-EP



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