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VSC8504-02 датащи(PDF) 115 Page - Microsemi Corporation

номер детали VSC8504-02
подробное описание детали  Quad-Port 10/100/1000BASE-T PHY with Synchronous Ethernet and QSGMII/SGMII MAC
PDF  131 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VSC8504-02 датащи(HTML) 115 Page - Microsemi Corporation

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Electrical Specifications
VMDS-10507 VSC8504-02 Datasheet Revision 4.2
104
5.3
Operating Conditions
The following table shows the recommended operating conditions for the VSC8504-02 device.
5.4
Stress Ratings
This section contains the stress ratings for the VSC8504-02 device.
Warning Stresses listed in the following table may be applied to devices one at a time without causing
permanent damage. Functionality at or exceeding the values listed is not implied. Exposure to these
values for extended periods may affect device reliability.
Warning This device can be damaged by electrostatic discharge (ESD) voltage. Microsemi
recommends that all integrated circuits be handled with appropriate precautions. Failure to observe
proper handling and installation procedures may adversely affect reliability of the device.
Table 124 •
Recommended Operating Conditions
Parameter
Symbol
Minimum
Typical Maximum
Unit
Power supply voltage for VDD1
VDD1
0.95
1.00
1.05
V
Power supply voltage for VDD1A
VDD1A
0.95
1.00
1.05
V
Power supply voltage for VDD25
VDD25
2.38
2.50
2.62
V
Power supply voltage for VDD25A
VDD25A
2.38
2.50
2.62
V
VSC8504-02 operating temperature(1)
1.
Minimum specification is ambient temperature, and the maximum is junction temperature. For carrier
class applications, the maximum operating temperature is 110 °C junction.
T0
125
°C
VSC8504-05 operating temperature(1)
T–40
125
°C
Table 125 •
Stress Ratings
Parameter
Symbol
Minimum
Maximum
Unit
Power supply voltage for core supply
VVDD1
–0.3
1.10
V
Power supply voltage for analog circuits
VVDD1A
–0.3
1.10
V
Power supply voltage for analog circuits
VVDD25A
–0.3
2.75
V
Power supply voltage for digital I/O
VVDD25
–0.3
2.75
V
Input voltage for GPIO and logic input pins
3.3
V
Storage temperature
TS
–55
125
°C
Electrostatic discharge voltage, charged
device model
VESD_CDM –250
250
V
Electrostatic discharge voltage, human body
model
VESD_HBM See note(1)
1.
This device has completed all required testing as specified in the JEDEC standard JESD22-A114,
Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)
, and complies with a
Class 2 rating. The definition of Class 2 is any part that passes an ESD pulse of 2000 V, but fails an
ESD pulse of 4000 V.
V



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