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CYT4DNJBJS датащи(PDF) 106 Page - Infineon Technologies AG

номер детали CYT4DNJBJS
подробное описание детали  TRAVEO™ T2G 32-bit Automotive MCU Based on Arm® Cortex®-M7 dual
PDF  209 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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Datasheet
106
002-24601 Rev. *I
2023-02-14
TRAVEO™ T2G 32-bit Automotive MCU
Based on Arm® Cortex®-M7 dual
Electrical specifications
SID66B
IDD_HIB3
VDDD current,
Hibernate Mode + RTC at
32.768 kHz
––
75
µA
TA = 85°C, using WCO,
VDDD = 5.5 V
SID66C
IDD_HIB4
VDDD current,
Hibernate Mode + RTC at
32.768 kHz
–
–
150
µA
TA = 25°C using LPECO
4 MHz, 20 pF load of LPECO
VDDD = 5.0 V
SID66D
IDD_HIB5
VDDD current,
Hibernate Mode + RTC at
32.768 kHz
–
–
215
µA
TA = 85°C, using LPECO
4 MHz, 20 pF load of LPECO
VDDD = 5.5 V
Power Mode Transition Times
SID69_1
tACT_DS
Power down time from ACTIVE to
DEEPSLEEP (using the internal
regulator)
––
2.8
µs
When IMO is already running
and all HFCLK roots are at
least 8 MHz. HFCLK roots
that are slower than this will
require additional time to
turn off.
SID69A
tACT_DS
Power down time from ACTIVE to
DeepSleep (using external PMIC)
––
6.5
µs
When IMO is already running
and all HFCLK roots are at
least 8MHz.HFCLK rootsthat
are slower than this will
require additional time to
turn off. The time for the
PMIC to deassert its power
good signal is not included.
SID67
tDS_ACT
DeepSleep to Active transition
time (IMO clock, flash execution)
––
26
µs
When using 8 MHz IMO.
Measured from wakeup
interrupt during DeepSleep
until Flash execution.
TA ≥ –5°C
Note: At temperatures below
–5°C the DeepSleep to Active
transition time can be higher
than the max time indicated by
as much as 20 µs
SID67A
tDS_ACT_FLL DeepSleep to Active transition
time (FLL clock, flash execution)
––
26
µs
When using FLL to generate
96 MHz from the 8-MHz IMO.
Measured from wakeup
interrupt during DeepSleep
until Flash execution.
TA ≥ –5°C
Note: At temperatures below
–5°C the DeepSleep to Active
transition time can be higher
than the max time indicated by
as much as 20 µs
SID67B
tDS_ACT_PLL DeepSleep to Active transition
time (PLL clock)
––
60
µs
When using PLL to generate
96 MHz from the 8-MHz IMO.
Measured from wakeup
interrupt during DeepSleep
until PLL locks.
TA ≥ –5°C
Note: At temperatures below
–5°C the DeepSleep to Active
transition time can be higher
than the max time indicated by
as much as 20 µs
Table 26-3
DC specifications, CPU current, and transition time specifications (continued)
All specifications are valid for –40°C  TA  105°C and for 2.7 V to 5.5 V except where noted.
Spec ID
Parameter
Description
Min
Typ Max Units
Details/conditions



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