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CYT4DNJBJS датащи(PDF) 99 Page - Infineon Technologies AG

номер детали CYT4DNJBJS
подробное описание детали  TRAVEO™ T2G 32-bit Automotive MCU Based on Arm® Cortex®-M7 dual
PDF  209 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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Datasheet
99
002-24601 Rev. *I
2023-02-14
TRAVEO™ T2G 32-bit Automotive MCU
Based on Arm® Cortex®-M7 dual
Electrical specifications
SID29
IOH3_GPIO_ABS
HIGH-level maximum output current for
GPIO[51]
––
–10
mA
Setting is 5 mA
SID29A
IOH4_GPIO_ABS
HIGH-level maximum output current for
GPIO[51]
––
–10
mA
Setting is 6 mA
SID30A
IOH_PMIC_EN_ABS
Source maximum current
–
–
–4
mA
For the pin PMIC_EN.
Required to add a current
limiting series resistor of
1.25 kΩ-5 kΩ to the
PMIC_EN output.
SID30B
Ʃ
IOH_PMIC_EN_ABS
Source average current
–
–
–1
mA
For the pin PMIC_EN
The average output
current is defined as the
value of the average
current flowing through
any one of the
corresponding pins for a 10
ms period. The average
value is the operation
current × the operation
ratio. The operation
current period over the
average current spec
should be less than 100 ns.
Required to add a current
limiting series resistor of
1.25 kΩ - 5 kΩ to the
PMIC_EN output.
SID33
Ʃ
IOH1_GPIO_ABS
HIGH-level total output current for
GPIO[52]
––
–50
mA
SID33A
IOH_SMC_ABS
HIGH-level maximum output current for
GPIO_SMC[53]
––
–52
mA
Setting is 30 mA at
–40°C
SID33B
Ʃ
IOH_SMC_ABS
HIGH-level total output current for
GPIO_SMC[54]
–
–
–300
mA
SID33C
IOH_SMIF_ABS
HIGH-level maximum output current for
SMIF[55]
––
–15
mA
CFG_OUT2/DS_TRIM<2:0>
= 0b110
SID33D
Ʃ
IOH_SMIF_ABS
HIGH-level total output current for
SMIF[56]
–
–
–100
mA
SID33E
IOH_FPD_ABS
HIGH-level maximum output current for
FPD-Link[57]
––
–24
mA
SID33F
Ʃ
IOH_FPD_ABS
HIGH-level total output current for
FPD-Link[58]
–
–
–120
mA
SID33G
IOH_HSIO_ABS
HIGH-level maximum output current for
HSIO[59]
––
–15
mA
SID33H
Ʃ
IOH_HSIO_ABS
HIGH-level total output current for
HSIO[60]
–
–
–150
mA
SID34
PD
Power dissipation
–
–
2900
mW
SID36
TA
Operating ambient temperature
–40
–
105
°C
For S-grade devices
SID38
TSTG
Storage temperature
–55
–
150
°C
SID39
TJ
Operating junction temperature
–40
–
150
°C
SID39A
VESD_HBM
Electrostatic discharge human body
model
2000
–
–
V
SID39B1
VESD_CDM1
Electrostatic discharge charged device
model for corner pins
750
–
–
V
SID39B2
VESD_CDM2
Electrostatic discharge charged device
model for all other pins
500
–
–
V
SID39C
ILU
Themaximumpincurrentthedevicecan
tolerate before triggering a latch-up
–100
–
100
mA
Table 26-1
Absolute maximum ratings (continued)
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/
conditions
Notes
59.The maximum output current is the peak current flowing through any one HSIO I/O.
60.The total output current is the maximum current flowing through all HSIO I/Os (HSIO_STD, HSIO_ENH, and HSIO_ENH_PDIFF).



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