поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

MPF0900AMBA2ES датащи(PDF) 109 Page - NXP Semiconductors

номер детали MPF0900AMBA2ES
подробное описание детали  Nine-channel power management IC with advanced system safety monitoring
PDF  205 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

MPF0900AMBA2ES датащи(HTML) 109 Page - NXP Semiconductors

Back Button MPF0900AMBA2ES Datasheet HTML 105Page - NXP Semiconductors MPF0900AMBA2ES Datasheet HTML 106Page - NXP Semiconductors MPF0900AMBA2ES Datasheet HTML 107Page - NXP Semiconductors MPF0900AMBA2ES Datasheet HTML 108Page - NXP Semiconductors MPF0900AMBA2ES Datasheet HTML 109Page - NXP Semiconductors MPF0900AMBA2ES Datasheet HTML 110Page - NXP Semiconductors MPF0900AMBA2ES Datasheet HTML 111Page - NXP Semiconductors MPF0900AMBA2ES Datasheet HTML 112Page - NXP Semiconductors MPF0900AMBA2ES Datasheet HTML 113Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 109 / 205 page
background image
NXP Semiconductors
PF09
Nine-channel power management IC with advanced system safety monitoring
All parameters are specified at TA = -40 °C to 125 °C, VSWxIN = VIN = UVDET to 5.5 V, VSWxFB = 1.0 V, ISWx = 0.5 A, typical
external component values, fSW = 2.5 MHz, unless otherwise noted. Typical values are characterized at VSWxIN = 5.0 V,
VSWxFB = 1.0 V, ISWx = 0.5 A, and TA = 25 °C, unless otherwise noted.
Symbol
Description
Min
Typ
Max
Unit
tPFM2PWM_SWx PFM to PWM transition time
10
–
50
µs
RDS25_SWxHS
High-side FET RDSON[2]
• TJ = 25°C
• Including bond-wire and package resistance
–
60
–
mΩ
RDS125_SWxHS
High-side FET RDSON[2]
• TJ = 125°C
• Including bond-wire and package resistance
–
75
–
mΩ
RDS25_SWxLS
Low-side FET RDSON[3]
• TJ = 25°C
• Including bond-wire and package resistance
–
32
–
mΩ
RDS125_SWxLS
Low-side FET RDSON[3]
• TJ = 125°C
• Including bond-wire and package resistance
–
42
–
mΩ
RDIS_SWx
Discharge-resistance
• Regulator disabled and ramp completed
20
60
100
Ω
Table 138. SW2 - SW5 electrical characteristics...continued
[1]
UVDET represents the minimum functional level for the PF09; VSW1IN must meet the minimum headroom to ensure proper output voltage regulation.
[2]
Typical high-side FET resistance due to packaging (bondwire + metal) at room temp is 24 mΩ.
[3]
Typical low-side FET resistance due to packaging (bondwire + metal) at room temp is 21 mΩ.
Symbol
Description
Min
Typ
Max
Units
L
Output inductor
• Nominal inductor DC resistance < 24 mΩ
• Minimum saturation current at full load: 5.5 A
–
0.47
–
µH
COUT
Effective output capacitance
• x 22 μF, 6.3 V
• Low ESR ceramic capacitor.
22
44
300
µF
CIN
Input capacitor
• 4.7 μF, 10 V
• Low ESR ceramic capacitor
4.23
4.7
5.17
µF
Table 139. SWx recommended external components.
13.2.4 LDO1 (500 mA linear regulator with load switch mode)
LDO1 is a low dropout linear regulator with 500 mA current capability and input voltage range from 1.8 V to 5.5
V. It provides programmable output voltage between 0.75 V and 3.3 V, with up to 2 % output voltage accuracy.
The LDO1 output implements a configurable soft-start ramp control during power up (enable) and discharge
mechanism during power down (disable).
The LDO1_RUN_EN bit is provided to enable or disabled the LDO1 output during the RUN state. The
LDO1_RUN_EN bit will be set to 1 by default, if the LDO is enabled in the Power-up sequence, or 0 if it is
disabled at power up.
PF09
All information provided in this document is subject to legal disclaimers.
© 2026 NXP B.V. All rights reserved.
Product data sheet
Rev. 1.3 — 16 December 2025
Document feedback
109 / 205



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com