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LPC55S6X датащи(PDF) 100 Page - NXP Semiconductors

номер детали LPC55S6X
подробное описание детали  32-bit Arm Cortex짰-M33; M33 coprocessor, TrustZone, PowerQuad, CASPER, 320 KB SRAM; 640 KB flash, USB HS,Flexcomm Interface, SDIO, 32-bit counter/ timers,SCTimer/PWM, PLU, 16-bit 1.0 Msamples/sec ADC,Comparator, Temperature Sensor, AES, PUF, SHA, CRC, RNG
PDF  128 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

LPC55S6X датащи(HTML) 100 Page - NXP Semiconductors

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LPC55S6x
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2020. All rights reserved.
Product data sheet
Rev. 1.9 — 10 February 2020
100 of 128
NXP Semiconductors
LPC55S6x
32-bit ARM Cortex-M33 microcontroller
[1]
Characterized on typical samples, not tested in production
; Tamb = 25
°C
[2]
On device revision 0A, the hysteresis on the comparator cannot be enabled
tdelay
propagation delay time
Low Power Mode
negative input =
VBAT_DCDC/2
V_overdrive = 10 mV
-
1150
6000
ns
V_overdrive = 50 mV
-
3100
-
ns
V_overdrive = max
-
900
3000
ns
propagation delay time
Low Power Mode
negative input =
VBAT_DCDC - 0.1 V
V_overdrive = 10 mV
-
6000
-
ns
V_overdrive = 50 mV
-
6000
-
ns
V_overdrive = max
-
4400
-
ns
propagation delay time
Low Power Mode
negative input = 0.1 V
V_overdrive = 10 mV
-
2400
-
ns
V_overdrive = 50 mV
-
2300
-
ns
V_overdrive = max
-
50
2000
ns
propagation delay time
Fast Mode
negative input =
VBAT_DCDC/2
V_overdrive = 10 mV
-
800
2000
ns
V_overdrive = 50 mV
-
520
-
ns
V_overdrive = max
-
210
300
ns
propagation delay time
Fast Mode
negative input =
VBAT_DCDC - 0.1 V
V_overdrive = 10 mV
-
1600
-
ns
V_overdrive = 50 mV
-
1150
-
ns
V_overdrive = max
-
790
-
ns
propagation delay time
Fast Mode
negative input = 0.1 V
V_overdrive = 10 mV
-
1400
-
ns
V_overdrive = 50 mV
-
405
-
ns
V_overdrive = max
-
40
100
ns
Vhys [2]
hysteresis voltage
(VHYST_P - VHSYT_N)
Common Mode Input Voltages in [200
mV: Vbat - 200mV] range (See Vin_N
in Figure 22)
-
100
200
mV
Rlad
ladder resistance
Resistive ladder, Divider ratio
programmed with 5-bit control word.
Entry point is either PIO1_19 or internal
VBAT_PMU
-1.27
-
M
Fig 22. Comparator Hysteresis
Table 40.
Comparator characteristics …continued
Tamb = 40 C to +105 C unless noted otherwise; VBAT_PMU = 1.8 V to 3.6 V.
Symbol
Parameter
Conditions
Min Typ[1] Max
Unit



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