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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LPC55S6X датащи(PDF) 75 Page - NXP Semiconductors |
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LPC55S6X датащи(HTML) 75 Page - NXP Semiconductors |
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75 / 128 page  LPC55S6x All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2020. All rights reserved. Product data sheet Rev. 1.9 — 10 February 2020 75 of 128 NXP Semiconductors LPC55S6x 32-bit ARM Cortex-M33 microcontroller [2] Clock source FRO. PLL disabled [1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 C). [2] Characterized through bench measurements using typical samples. [3] The maximum values represent characterized results equivalent to the mean plus three times the standard deviation (mean + 3 sigma). Table 18. Static characteristics: Power consumption in deep-sleep, power-down, and deep power-down modes Tamb = 40 C to +105 C; unless otherwise specified. IDD is total current from VBAT_DCDC, VBAT_PMU, VDDA, and VDD supply domains. VSUPPLY = VBAT_DCDC + VBAT_PMU + VDDA + VDD Sym bol Parameter Conditions Min Typ[1][2] Max[3] Unit IDD supply current Deep-sleep mode; all SRAM on Tamb =25 C, VSUPPLY = 3.0 v [2] - 110 135 A Tamb =25 C, VSUPPLY = 1.8 v [2] - 148 191 A Tamb =105 C, VSUPPLY = 1.8 v [2] - - 1850 A Power-down mode. [2] SRAM_X2 (4 KB) powered Tamb =25 C, VSUPPLY = 3.0 v - 3.9 4.5 A SRAM_X2 (4 KB) powered Tamb =105 C, VSUPPLY = 3.0 v - - 85 A SRAM_X2 and SRAM_X3 (8 KB) powered Tamb =25 C, VSUPPLY = 3.0 v - 4.0 - A 320 KB full retention Tamb =25 C, VSUPPLY = 3.0 v - 14 18 A 320 KB full retention Tamb =105 C, VSUPPLY = 3.0 v - - 480 A Deep power-down mode; RTC oscillator input grounded (RTC oscillator disabled, 4 KB SRAM powered) Tamb =25 C, VSUPPLY= 3.0 v [2] - 590 750 nA Deep power-down mode; RTC oscillator input grounded (RTC oscillator disabled, 4 KB SRAM powered) Tamb =105 C, VSUPPLY= 3.0 v [2] --15 A RTC oscillator running with external crystal (4 KB SRAM powered) - 790 - nA |
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