LPC55S6X datasheet(83/128 Pages) NXP

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LPC55S6x

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Product data sheet

Rev. 1.9 — 10 February 2020

83 of 128

NXP Semiconductors

LPC55S6x

32-bit ARM Cortex-M33 microcontroller

11.3 Wake-up process

[1]

Typical ratings are not guaranteed. The values listed are at room temperature (25

C), nominal supply

voltages.

[2]

The wake-up time measured is the time between when a GPIO input pin is triggered to wake the device up

from the low power modes and from when a GPIO output pin is set in the interrupt service routine (ISR)

wake-up handler.

[3]

FRO enabled, all peripherals off.

[4]

RTC disabled. Wake-up from deep power-down causes the part to go through entire reset

process. The wake-up time measured is the time between when the RESET pin is triggered to wake the

device up and when a GPIO output pin is set in the reset handler. Wake-up time for non-secure mode.

[5]

Compiler settings: IAR v8.40, High optimization

[6]

Applies to device revision 1B.

[7]

Applies to device revision 0A.

11.4 FRO (12 MHz/96 MHz)

[1]

Typical ratings are not guaranteed. The values listed are at room temperature (25

C), nominal supply

voltages.

11.5 FRO (1 MHz)

[1]

Typical ratings are not guaranteed. The values listed are at room temperature (25

C), nominal supply

voltages.

Table 25.

Dynamic characteristic: Typical wake-up times from low power modes

VBAT_PMU = VBAT_DCDC = VDD = 3.3 V;Tamb =25 C; using FRO as the system clock.

Symbol Parameter Conditions

Min

Typ[1][5]

Max Unit

twake

wake-up

time

from Sleep mode, 12 MHz, No

PRIMASK backup and restore

[2][3]

4.0

s

from Sleep mode, 96 MHz, No

PRIMASK backup and restore

[2][3]

500

from Deep-sleep mode with full

SRAM retention:

[2]

s

from Power-down mode with CPU

retention and 4 KB retained

[2]

346

s

from deep power-down mode; 4KB

retained, RTC disabled; using

RESET pin.

[4][6]

4.6

from deep power-down mode; 4KB

retained, RTC disabled; using

RESET pin.

[4][7]

Table 26.

Dynamic characteristic: FRO

Tamb = 40 C to +105 C; 1.8 V  VBAT_DCDC  3.6 V.

Symbol

Parameter

Conditions

Min

Typ[1]

Max

Unit

fosc(RC)

FRO clock frequency

11.76

12.24

MHz

fosc(RC)

FRO clock frequency

94.08

97.92

MHz

Table 27.

Dynamic characteristic: FRO

Tamb = 40 C to +105 C; 1.8 V  VBAT_DCDC  3.6 V.

Symbol

Parameter

Conditions

Min

Typ[1]

Max

Unit

fosc(RC)

FRO clock frequency

0.85

1.15

MHz

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