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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LPC55S6X датащи(PDF) 99 Page - NXP Semiconductors |
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LPC55S6X датащи(HTML) 99 Page - NXP Semiconductors |
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99 / 128 page  LPC55S6x All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2020. All rights reserved. Product data sheet Rev. 1.9 — 10 February 2020 99 of 128 NXP Semiconductors LPC55S6x 32-bit ARM Cortex-M33 microcontroller [9] Input data is 1kHz sine wave, ADC conversion clock 24 MHz, Power Select = 3, Average setting = 4. 12.2.1 ADC input resistance 12.2.2 Temperature sensor [1] Absolute temperature accuracy. Based on characterization, not tested in production. [2] Typical values are derived from nominal simulation 12.2.3 Comparator Table 38. ADC input resistance Tamb = 40 C to +105 C Min Typ Max Unit RI input resistance Fast Input Channels PIO0_16/PIO0_23 - 1 2 k PIO0_11/PIO0_10 - 1 2 k PIO0_12/PIO0_15 - 1 2 k PIO1_0/PIO0_31 - 1 2 k Standard Input Channels PIO1_9/PIO1_8 - 1.4 3.6 k Table 39. Temperature sensor static and dynamic characteristics VBAT_PMU = VBAT_DCDC = VDD = 3.0 V Symbol Parameter Conditions Min Typ Max Unit DTsen sensor temperature accuracy Tamb = 40 C to +105 C [1] -- 4 C ts(pu) power-up settling time [2] -5 - s Table 40. Comparator characteristics Tamb = 40 C to +105 C unless noted otherwise; VBAT_PMU = 1.8 V to 3.6 V. Symbol Parameter Conditions Min Typ[1] Max Unit Static characteristics IDD supply current Low Power Mode -2.5 - A Fast Mode -5 - A VIC common-mode input voltage Propagation delay; Vcm_min = 0.1 V to VBAT_PMU-0.1 V 0 - VBAT_PMU V Voffset offset voltage 0- 10 mV Dynamic characteristics tstartup start-up time nominal process; VBAT_PMU = 3.3 V; Tamb = 25 °C, Max overdrive with reference at mid-supply -3.3 - s |
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