M16CSLASH26 datasheet(204/239 Pages) RENESAS

204 / 239 page

Renesas Technology Corp.

CPU Rewrite Mode (Flash Memory Version)

198

M16C/26 Group

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Under

development

Preliminary Specifications Rev. 0.9

Specifications in this manual are tentative and subject to change.

Note 1: Refer to Figure 1.20.6

Note 2: If the error occurs, try to execute clear status register command,

then block erase command at least three times until erase error

disappears.

Write 2016

Write D016

Block address

Check full status check

(Note 1)

Block erase

completed

Start

Status register

read

YES

SR7=1?

RY/BY=1?

Error

Erase error (Note 2)

(Set an address to even address in the user

ROM area when reading the status register)

(Set an address to even address in the

user ROM area when write 2016 )

Figure 1.20.4. Block erase flowchart

Block Erase Command (2016/D016)

By writing the command code “2016” in the first bus cycle and the confirmation command code “D016”

in the second bus cycle that follows to the block address of a flash memory block, the system initiates

an auto erase (erase and erase verify) operation.

Whether the auto erase operation is completed can be confirmed by reading the status register or the

flash memory control register 0. At the same time the auto erase operation starts, the read status

status register bit 7 (SR7) is set to 0 at the same time the auto erase operation starts and is returned

to 1 upon completion of the auto erase operation. In this case, the read status register mode remains

active until the Read Array command (FF16) or Read Lock Bit Status command (7116) is written or the

flash memory is reset using its reset bit.

The RY/BY status flag of the flash memory control register 0 is 0 during auto erase operation and 1

when the auto erase operation is completed as is the status register bit 7.

After the auto erase operation is completed, the status register can be read out to know the result of

the auto erase operation. For details, refer to the section where the status register is detailed.

Figure 1.20.4 shows an example of a block erase flowchart.

Each block of the flash memory can be protected against erasure by using a lock bit. For details, refer

to the section where the data protect function is detailed.

During EW1 mode, do not execute this command on blocks in which the control program is stored.

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