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M16C/26 датащи(PDF) 190 Page - Renesas Technology Corp

номер детали M16C/26
подробное описание детали  16-BIT CMOS SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/20 SERIES
PDF  239 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

M16C/26 датащи(HTML) 190 Page - Renesas Technology Corp

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Renesas Technology Corp.
Flash Memory
184
M16C/26 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Under
development
Preliminary Specifications Rev. 0.9
Specifications in this manual are tentative and subject to change.
Table 1.19.1. Outline performance of the M16C/26 (flash memory version)
Outline Performance
Table 1.19.1 shows the outline performance of the M16C/26 (flash memory version).
Item
Flash memory operation mode
Erase block
division
Write method
Erase method
Erase/Write (E/W) control method
Protect method
Number of commands
Erase/Write count (Notes 1, 2)
ROM code protect
Performance
Three user modes (standard serial I/O, CPU rewrite, parallel I/O)
See Figure 1.19.1
In units of word.
Block erase
E/W control by software command
Two 8Kbyte user by register lock bit (FMR02)
5 commands
Depends on device code (see Table 1.2b)
Parallel I/O and standard serial I/O modes are supported.
Note 1: Block A and Block B are 10,000 times E/W. All other blocks are 1000 times E/W. (Under
development; mass production scheduled to start in the 3rd quarter of 2003.)
Note 2: Definition of E/W times:
The E/W times are defined to be per-block erasure times. For example, assume a case whereby a
4-Kbyte Block A is programmed one word at a time and erased once all 2048 write operations
have completed. In this case, the block is considered to have been written and erased once.
If a product is 100 times E/W, each block in it can be erased up to 100 times. When 10,000 times
E/W, Block A and Block B can each be erased up to 10,000 times. All other blocks can each be
erased up to 1000 times.
User ROM area
Data Retention
10 years



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