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M16C/26 датащи(PDF) 190 Page - Renesas Technology Corp |
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M16C/26 датащи(HTML) 190 Page - Renesas Technology Corp |
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190 / 239 page ![]() Renesas Technology Corp. Flash Memory 184 M16C/26 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Under development Preliminary Specifications Rev. 0.9 Specifications in this manual are tentative and subject to change. Table 1.19.1. Outline performance of the M16C/26 (flash memory version) Outline Performance Table 1.19.1 shows the outline performance of the M16C/26 (flash memory version). Item Flash memory operation mode Erase block division Write method Erase method Erase/Write (E/W) control method Protect method Number of commands Erase/Write count (Notes 1, 2) ROM code protect Performance Three user modes (standard serial I/O, CPU rewrite, parallel I/O) See Figure 1.19.1 In units of word. Block erase E/W control by software command Two 8Kbyte user by register lock bit (FMR02) 5 commands Depends on device code (see Table 1.2b) Parallel I/O and standard serial I/O modes are supported. Note 1: Block A and Block B are 10,000 times E/W. All other blocks are 1000 times E/W. (Under development; mass production scheduled to start in the 3rd quarter of 2003.) Note 2: Definition of E/W times: The E/W times are defined to be per-block erasure times. For example, assume a case whereby a 4-Kbyte Block A is programmed one word at a time and erased once all 2048 write operations have completed. In this case, the block is considered to have been written and erased once. If a product is 100 times E/W, each block in it can be erased up to 100 times. When 10,000 times E/W, Block A and Block B can each be erased up to 10,000 times. All other blocks can each be erased up to 1000 times. User ROM area Data Retention 10 years |
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