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SC28L201 датащи(PDF) 96 Page - NXP Semiconductors |
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SC28L201 датащи(HTML) 96 Page - NXP Semiconductors |
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96 / 110 page ![]() 9397 750 13138 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 31 October 2005 96 of 110 Philips Semiconductors SC28L201 3.3 V, 5 V UART, 3.125 Mbit/s, with 256-byte FIFO 12.1 Timing diagrams The active time of read or write cycle exists only when CEN is LOW and RDN or CEN is also LOW. Write = CEN and WRN LOW. Read = CEN and RDN LOW. For the 68000 mode: Write = CEN LOW and R/WN LOW and DACKN HIGH. Read = CEN LOW and R/WN HIGH. In general, it is convenient (but is not at all required) to think of the Read/Write signal to be active and then let the CEN be the ‘strobing’ or clocking control. However, some users have wired CEN LOW and allowed RDN or WRN to be the clocking or strobing input. While this is completely within the specified limits, it is not recommended since it will greatly increase the part’s sensitivity to noise ‘glitches’ on the RDN and WRN signals. For the 68000 mode, the CEN is very much the clock or ‘strobing’ signal. The RDN and WRN signals have been combined into the R/WN signal. Therefore, the part is always prepared to do a write or read; it only needs CEN to enable. In the 68000 mode design, care should be given to system drift over temperature, voltage, and age when R/WN and CEN change very close to each other. If R/WN switches shortly before CEN (due to system drift) it is possible to produce very short internal read or write pulses which could change internal controls, FIFO address pointers, for example. Figure 5 loosely shows the timing conditions that may exist of the active area those signals will produce. |
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