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SC28L201 датащи(PDF) 95 Page - NXP Semiconductors

номер детали SC28L201
подробное описание детали  3.3 V, 5 V UART, 3.125 Mbit/s, with 256-byte FIFO
PDF  110 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

SC28L201 датащи(HTML) 95 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 31 October 2005
95 of 110
Philips Semiconductors
SC28L201
3.3 V, 5 V UART, 3.125 Mbit/s, with 256-byte FIFO
[1]
Test conditions for outputs: CL = 85 pF, except interrupt outputs. Test conditions for interrupt outputs: CL =85pF, RL = 2.7 kΩ to VDD.
[2]
Timing is illustrated and referenced to the WRN and RDN inputs. Also, CEN may be the ‘strobing’ input. CEN and RDN (also CEN and
WRN) are ORed internally. The signal asserted last initiates the cycle and the signal negated first terminates the cycle.
[3]
Guaranteed by characterization of sample units.
[4]
If CEN is used as the ‘strobing’ input, the parameter defines the minimum HIGH times between one CEN and the next. The RDN signal
must be negated for td(RWD) time to guarantee that any Status Register changes are valid.
[5]
Minimum frequencies are not tested, but are guaranteed by design.
[6]
Clocks for 1
× mode should be reasonably symmetrical.
[7]
Data is usually setup with respect to CEN going LOW (the leading edge of CEN). This mode strongly implies the use of DACKN. (Its use
is not strictly required.) DACKN is derived from the X1/SCLK input. It is seldom that the system clocks that ultimately drive the CEN,
address, and R/WN signals are synchronous to the X1/SCLK. If address, data, R/WN are setup before CEN goes LOW and hold
through DACKN, the timing parameters above will be guaranteed.
th(D)(mot)
CEN HIGH to data hold time
0-0-
ns
tsu(An-CENL)(mot)
address to CEN LOW setup
time
10-10-
ns
th(CENL-An)(mot)
CEN LOW to address hold time
10
-
10
-
ns
tDv(CENL)
CEN LOW to data valid time
-
45
-
35
ns
td(RWD)(mot)
read and write cycle HIGH time
[2] [4]
10-10-
ns
tDCR
X1/SCLK HIGH to DACKN LOW
time (read cycle)
-
35
-
35
ns
tDCW
X1/SCLK HIGH to DACKN LOW
time (write cycle)
-
30
-
25
ns
tDAT
CEN to IACKN HIGH DACKN
high-impedance time
-
15
-
15
ns
tCSC
CEN or IACKN to X1/SCLK
HIGH setup time
for minimum DACKN cycle
10
-
10
-
ns
Table 82:
Dynamic characteristics …continued
Tamb = −40 °C to +85 °C; voltage tolerance ± 10 %; unless otherwise specified. [1]
Symbol
Parameter
Conditions
VDD = 3.3 V
VDD =5V
Unit
Min
Max
Min
Max



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