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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M16C/26 датащи(PDF) 185 Page - Renesas Technology Corp |
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M16C/26 датащи(HTML) 185 Page - Renesas Technology Corp |
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185 / 239 page  Electrical Characteristics (Vcc = 3V) 179 Renesas Technology Corp. M16C/26 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Under development Preliminary Specifications Rev. 0.9 Specifications in this manual are tentative and subject to change. VCC = 3V Table 1.18.24. Electrical characteristics (referenced to VCC = 2.7 to 3.3V, VSS = 0V at Topr = – 20oC to 85oC / – 40oC to 85oC (Note 1), f(XIN) = 10MHZ with wait unless otherwise specified) RPULLUP VRAM RfXIN Symbol VOH HIGH output voltage VOH VOL LOW output voltage LOW output voltage VOL HIGH output voltage Standard Typ. Unit Measuring condition V V XOUT 2.5 2.5 V 0.5 V XOUT 0.5 0.5 Min. Max. 2.5 Parameter IOH=-1mA IOH=-0.1mA IOH=-50 µA IOL=1mA IOL=0.1mA P15 to P17, P60 to P67, P72 to P77, P80 to P83, P85 to P87, P90 to P93, P100 to P107 HIGHPOWER LOWPOWER HIGHPOWER LOWPOWER HIGHPOWER LOWPOWER HIGH output voltage XCOUT With no load applied With no load applied 2.5 1.6 V Hysteresis Hysteresis HIGH input current IIH LOW input current IIL RAM retention voltage Icc Power supply current (Vcc=2.7 to 3.0V) VT+-VT- VT+-VT- 0.2 0.8 V 0.2 1.8 V P15 to P17, P60 to P67, P70 to P77, P80 to P83, P85 to P87, P90 to P93, P100 to P107 XIN, RESET, CNVss 4.0 µA µA When clock is stopped 2.0 V RESET The output pins are open and other pins are Vss VI=3V VI=0V -4.0 RfXCIN Feedback resistance XIN Feedback resistance XCIN 25.0 3.0 M Ω M Ω Pull-up resistance 160 k Ω LOW output voltage V XCOUT 0 0 With no load applied IOL=50 µA With no load applied HIGHPOWER LOWPOWER VI=0V 66 500 TA0IN to TA4IN, TB0IN to TB2IN, INT0, INT1, INT3 to INT5, NMI, ADTRG, CTS0 to CTS2, SCL, SDA, CLK0 to CLK2, TA2OUT to TA4OUT, KI0 to KI3, RxD0 to RxD2 P15 to P17, P60 to P67, P70 to P77, P80 to P83, P85 to P87, P90 to P93, P100 to P107 P15 to P17, P60 to P67, P70 to P77, P80 to P83, P85 to P87, P90 to P93, P100 to P107 XIN, RESET, CNVss P15 to P17, P60 to P67, P72 to P77, P80 to P83, P85 to P87, P90 to P93, P100 to P107 Note 1: Specify a product of -40 °C to 85°C to use it. Note 2: With one timer operated using fC32. Flash memory version 13 Square wave, no division f(XIN) = 10MHz mA Flash memory version 8 µA f(XCIN) = 32kHz Square wave, in RAM Flash memory version 25 Square wave, in Flash f(XCIN) = 32kHz µA Flash memory version 420 f(XCIN) = 32kHz When a WAIT instruction is executed.(Note 2) Oscillation capacity High µA 6.0 µA f(XCIN) = 32kHz When a WAIT instruction is executed.(Note 2) Oscillation capacity Low 1.8 µA Topr = 25 °C when clock is stopped 0.7 3.0 Note 3: IDET is dissipation current when the following bit is set to "1" (detection circuit enabled). IDET4: VC27 bit of VCR2 register IDET3: VC26 bit of VCR2 register IDET4 VDET4 detection dissipation current (Note 3) 0.6 4 µA IDET3 Reset level detection dissipation current (Note 3) 0.4 2 µA |
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