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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LFSC датащи(PDF) 62 Page - Lattice Semiconductor |
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LFSC датащи(HTML) 62 Page - Lattice Semiconductor |
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62 / 237 page  3-18 DC and Switching Characteristics Lattice Semiconductor LatticeSC/M Family Data Sheet EBR Timing tCO_EBR CK_Q_DEL Clock (Read) to output from Address or Data — 1.900 — 2.116 — 2.335 ns tCOO_EBR CK_Q_DEL Clock (Write) to output from EBR output Register 0.390 — 0.444 — 0.498 — ns tSUDATA_EBR D_CK_SET Setup Data to EBR Memory (Write clk) -0.173 — -0.192 — -0.210 — ns tHDATA_EBR D_CK_HLD Hold Data to EBR Memory (Write clk) 0.276 — 0.305 — 0.335 — ns tSUADDR_EBR A_CK_SET Setup Address to EBR Memory (Write clk) -0.165 — -0.182 — -0.200 — ns tHADDR_EBR A_CK_HLD Hold Address to EBR Memory (Write clk) 0.269 — 0.298 — 0.327 — ns tSUWREN_EBR CE_CK_SET Setup Write/Read Enable to EBR Memory (Write/Read clk) 0.225 — 0.226 — 0.226 — ns tHWREN_EBR CE_CK_HLD Hold Write/Read Enable to EBR Memory (write/read clk) 0.073 — 0.095 — 0.116 — ns tSUCE_EBR CS_CK_SET Clock Enable Setup Time to EBR Output Register (Read clk) 0.261 — 0.269 — 0.276 — ns tHCE_EBR CS_CK_HLD Clock Enable Hold Time to EBR Out- put Register (Read clk) 0.023 — 0.039 — 0.055 — ns tRSTO_EBR RESET_Q_DEL Reset To Output Delay Time from EBR Output Register (asynchronous) — 0.589 — 0.673 — 0.757 ns Cycle Boosting Timing tDEL1 DEL1 Cycle boosting delay 1 applies to PIO, PFU, EBR — 0.480 — 0.524 — 0.570 ns tDEL2 DEL2 Cycle boosting delay 2 applies to PIO, PFU, EBR — 0.922 — 1.005 — 1.090 ns tDEL3 DEL3 Cycle boosting delay 3 applies to PIO, PFU, EBR — 1.366 — 1.488 — 1.612 ns 1. Complete timing parameters for a user design will be incorporated when running ispLEVER. This is a sampling of the key timing parameters. LatticeSC/M Internal Timing Parameters 1 (Continued) Over Recommended Commercial Operating Conditions at VCC = 1.2V +/- 5% Parameter Symbol Description -7 -6 -5 Units Min. Max. Min. Max. Min. Max. |
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