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MSP430 датащи(PDF) 5 Page - Texas Instruments |
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MSP430 датащи(HTML) 5 Page - Texas Instruments |
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5 / 88 page ![]() 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT Voltage PVDD, IOVDD to GND –0.3 5.5 V VDD to GND –0.3 1.98 V AIN0, POL_SEL/AIN1, VOUT to GND –0.3 PVDD + 0.3 V Digital Input/Output to GND –0.3 IOVDD + 0.3 V VREFIO to GND –0.3 VDD + 0.3 V REF_GND to GND –0.3 0.3 V Input current Current into any pin –10 10 mA TJ Junction temperature –55 150 °C Tstg Storage temperature –65 150 (1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002, all pins(2) ±500 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT PVDD to GND PVDD > 2.7 V, VDD internally generated 2.7 5.5 V PVDD = VDD 1.71 1.89 V VDD to GND 1.71 1.89 V IOVDD to GND 1.71 5.5 V VREFIO to GND External VREF 1.2 1.25 1.3 V TA Ambient temperature Specified –40 125 °C Operating –55 125 6.4 Thermal Information THERMAL METRIC(1) AFEx8101 UNIT RRU (UQFN) 24 PINS RθJA Junction-to-ambient thermal resistance 103.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 84.4 °C/W RθJC(bottom) Junction-to-case (bottom) thermal resistance N/A °C/W RθJB Junction-to-board thermal resistance 69.5 °C/W ΨJT Junction-to-top characterization parameter 0.4 °C/W ΨJB Junction-to-board characterization parameter 68.4 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. www.ti.com AFE78101, AFE88101 SLASF21 – DECEMBER 2022 Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 5 Product Folder Links: AFE78101 AFE88101 |
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