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ST20-GP6 датащи(PDF) 63 Page - STMicroelectronics |
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ST20-GP6 датащи(HTML) 63 Page - STMicroelectronics |
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63 / 123 page ![]() ST20-GP6 63/123 EMIConfigData1Bank0-3 The EMIConfigData1Bank0-3 registers contain configuration data for each of the EMI banks. The format of each of the EMIConfigData1 registers is shown in Table 10.5. EMIConfigData2Bank0-3 The EMIConfigData2Bank0-3 registers contain configuration data for each of the EMI banks. The format of each of the EMIConfigData2 registers is shown in Table 10.6. EMIConfigData1Bank0-3 EMI base address + #04, #14, #24, #34 Read/Write Bit Bit field Function Units 1:0 BEe2TimeRead Rising edge of notMemBE. 0 to 3 phases before end of access cycle Phases 3:2 BEe1TimeRead Falling edge of notMemBE. 0 to 3 phases after start of access cycle Phases 5:4 OEe2TimeRead Rising edge of notMemOE. 0 to 3 phases before end of access cycle Phases 7:6 OEe1TimeRead Falling edge of notMemOE. 0 to 3 phases after start of access cycle Phases 9:8 CEe2TimeRead Rising edge of notMemCE. 0 to 3 phases before end of access cycle Phases 11:10 CEe1TimeRead Falling edge of notMemCE. 0 to 3 phases after start of access cycle Phases 15:12 AccessTimeRead 2 cycles + 0 to 15 cycles Cycles Table 10.5 EMIConfigData1 register format - 1 per bank EMIConfigData2Bank0-3 EMI base address + #08, #18, #28, #38 Read/Write Bit Bit field Function Units 1:0 BEe2TimeWrite Rising edge of notMemBE. 0 to 3 phases before end of access cycle Phases 3:2 BEe1TimeWrite Falling edge of notMemBE. 0 to 3 phases after start of access cycle Phases 5:4 OEe2TimeWrite Rising edge of notMemOE. 0 to 3 phases before end of access cycle Phases 7:6 OEe1TimeWrite Falling edge of notMemOE. 0 to 3 phases after start of access cycle Phases 9:8 CEe2TimeWrite Rising edge of notMemCE. 0 to 3 phases before end of access cycle Phases 11:10 CEe1TimeWrite Falling edge of notMemCE. 0 to 3 phases after start of access cycle Phases 15:12 AccessTimeWrite 2 cycles + 0 to 15 cycles Cycles Table 10.6 EMIConfigData2 register format - 1 per bank |
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