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DP83916 датащи(PDF) 77 Page - National Semiconductor (TI) |
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DP83916 датащи(HTML) 77 Page - National Semiconductor (TI) |
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77 / 96 page ![]() 70 AC and DC Specifications (Continued) MEMORY READ BMODE e 0 ASYNCHRONOUS MODE TLF11722 – 64 Number Parameter 20 MHz Units Min Max T9 BSCK to Address Valid 34 ns T10 Address Hold Time from BSCK 5 ns T11b BSCK to ADS DS ECS Low 30 ns T12b BSCK to ADS DS ECS High 32 ns T13 BSCK to DS High 36 ns T15 ADS High Width (Note 2) bcyc b 5ns T16 Read Data Strobe High Width (Note 2) bcyc b 12 ns T17 Read Data Strobe Low Width (Note 2) bcyc b 5ns T23 Read Data Setup Time to BSCK 12 ns T24 Read Data Hold Time from BSCK 7 ns T28 BSCK to MWR (Read) Valid (Note 1) 30 ns T32a Ready Asynch Setup Time to BSCK (Note 3) 8 ns T33a Ready Asynch Hold Time to BSCK 5 ns Note 1 For successive read operations MWR remains low and for successive write operations MWR remains high During RBA and TBA transfers the MWR signal will stay either high or low for the entire burst of the transfer During RDA and TDA transfers the MWR signal will switch on the rising edge of a Ti (idle) state that is inserted between the read and the write operation Note 2 bcyc e bus clock cycle time (T3) Note 3 This setup time assures that the SONIC-16 terminates the memory cycle on the next bus clock (BSCK) RDYi does not need to be synchronized to the bus clock though since it is an asynchronous input in this case RDYi is sampled during the falling edge of BSCK If the SONIC-16 samples RDYi low during the T1 cycle the SONIC-16 will finish the current access in a total of two bus clocks instead of three which would be the case if RDYi had been sampled low during T2(wait) (This is assuming that programmable wait states are set to 0) 77 |
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