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SC2200 датащи(PDF) 14 Page - National Semiconductor (TI) |
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SC2200 датащи(HTML) 14 Page - National Semiconductor (TI) |
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14 / 433 page ![]() www.national.com 14 Revision 3.0 Architecture Overview (Continued) 6:4 SODIMM_PG_SZ (SODIMM Page Size - Banks 0 and 1). Selects the page size of SODIMM: 000: 1 KB 010: 4 KB 1xx: 16 KB 001: 2 KB 011: 8 KB 111: SODIMM not installed Both banks 0 and 1 must have the same page size. 3:0 RSVD (Reserved). Write as 0. GX_BASE+840Ch-840Fh MC_SYNC_TIM1 (R/W) Reset Value: 2A733225h 31 RSVD (Reserved). Write as 0. 30:28 LTMODE (CAS Latency). CAS latency is the delay, in SDRAM clock cycles, between the registration of a read command and the availability of the first piece of output data. This parameter significantly affects system performance. Optimal setting should be used. If an SODIMM is used, BIOS can interrogate EEPROM across the ACCESS.bus interface to determine this value: 000: Reserved 010: 2 CLK 100: 4 CLK 110: 6 CLK 001: Reserved 011: 3 CLK 101: 5 CLK 111: 7 CLK This field will not take effect until SDRAMPRG (bit 0 of MC_MEM_CNTRL1) transitions from 0 to 1. 27:24 RC (RFSH to RFSH/ACT Command Period, tRC). Minimum number of SDRAM clock between RFSH and RFSH/ACT commands: 0000: Reserved 0100: 5 CLK 1000: 9 CLK 1100: 13 CLK 0001: 2 CLK 0101: 6 CLK 1001: 10 CLK 1101: 14 CLK 0010: 3 CLK 0110: 7 CLK 1010: 11 CLK 1110: 15 CLK 0011: 4 CLK 0111: 8 CLK 1011: 12 CLK 1111: 16 CLK 23:20 RAS (ACT to PRE Command Period, tRAS). Minimum number of SDRAM clocks between ACT and PRE commands: 0000: Reserved 0100: 5 CLK 1000: 9 CLK 1100: 13 CLK 0001: 2 CLK 0101: 6 CLK 1001: 10 CLK 1101: 14 CLK 0010: 3 CLK 0110: 7 CLK 1010: 11 CLK 1110: 15 CLK 0011: 4 CLK 0111: 8 CLK 1011: 12 CLK 1111: 16 CLK 19 RSVD (Reserved). Write as 0. 18:16 RP (PRE to ACT Command Period, tRP). Minimum number of SDRAM clocks between PRE and ACT commands: 000: Reserved 010: 2 CLK 100: 4 CLK 110: 6 CLK 001: 1 CLK 011: 3 CLK 101: 5 CLK 111: 7 CLK 15 RSVD (Reserved). Write as 0. 14:12 RCD (Delay Time ACT to READ/WRT Command, tRCD). Minimum number of SDRAM clock between ACT and READ/WRT commands. This parameter significantly affects system performance. Optimal setting should be used: 000: Reserved 010: 2 CLK 100: 4 CLK 110: 6 CLK 001: 1 CLK 011: 3 CLK 101: 5 CLK 111: 7 CLK 11 RSVD (Reserved). Write as 0. 10:8 RRD (ACT(0) to ACT(1) Command Period, tRRD). Minimum number of SDRAM clocks between ACT and ACT command to two different component banks within the same module bank. The memory controller does not perform back-to-back Acti- vate commands to two different component banks without a READ or WRITE command between them. Hence, this field should be written as 001. 7 RSVD (Reserved). Write as 0. 6:4 DPL(Data-intoPRE command period, tDPL). Minimum number of SDRAM clocks from the time the last write datum is sampled till the bank is precharged: 000: Reserved 010: 2 CLK 100: 4 CLK 110: 6 CLK 001: 1 CLK 011: 3 CLK 101: 5 CLK 111: 7 CLK 3:0 RSVD (Reserved). Leave unchanged. Always returns a 101h. Note: Refer to the SDRAM manufacturer’s specification for more information on component banks. Table 1-2. SC2200 Memory Controller Registers (Continued) Bit Description |
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