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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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K32L2AX датащи(PDF) 60 Page - NXP Semiconductors |
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K32L2AX датащи(HTML) 60 Page - NXP Semiconductors |
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60 / 96 page  Table 30. Flash program/erase timing specifications (continued) Symbol Description Min. Typ. Max. Unit Notes thversblk128k Erase Block high-voltage time for 128 KB — 52 452 ms 1 thversall Erase All high-voltage time — 104 904 ms 1 1. Maximum time based on expectations at cycling end-of-life. 8.4.1.2 Flash timing specifications — commands Table 31. Flash command timing specifications Symbol Description Min. Typ. Max. Unit Notes trd1blk128k Read 1s Block execution time • 128 KB program flash — — 1.7 ms 1 trd1sec1k Read 1s Section execution time (flash sector) — — 60 μs 1 tpgmchk Program Check execution time — — 45 μs 1 trdrsrc Read Resource execution time — — 30 μs 1 tpgm4 Program Longword execution time — 65 145 μs — tersblk128k Erase Flash Block execution time • 128 KB program flash — 88 600 ms 2 tersscr Erase Flash Sector execution time — 14 114 ms 2 trd1all Read 1s All Blocks execution time — — 1.8 ms 1 trdonce Read Once execution time — — 25 μs 1 tpgmonce Program Once execution time — 65 — μs — tersall Erase All Blocks execution time — 175 1300 ms 2 tvfykey Verify Backdoor Access Key execution time — — 30 μs 1 1. Assumes 25 MHz flash clock frequency. 2. Maximum times for erase parameters based on expectations at cycling end-of-life. 8.4.1.3 Flash high voltage current behaviors Table 32. Flash high voltage current behaviors Symbol Description Min. Typ. Max. Unit IDD_PGM Average current adder during high voltage flash programming operation — 2.5 6.0 mA IDD_ERS Average current adder during high voltage flash erase operation — 1.5 4.0 mA Peripheral operating requirements and behaviors 60 K32 L2A Microcontroller with 512 KB Flash and 128 KB SRAM, Rev. 3, 02/2021 NXP Semiconductors |
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