K32L2AX datasheet(37/96 Pages) NXP

37 / 96 page

Table 12. Voltage and current operating requirements (continued)

Symbol

Description

Min.

Max.

Unit

Notes

IICcont

Contiguous pin DC injection current —regional limit,

includes sum of negative injection currents of 16

contiguous pins

• Negative current injection

-25

—

VODPU

Open drain pullup voltage level

VDD

VRAM

VDD voltage required to retain RAM

1.2

—

1. All I/O pins are internally clamped to VSS through a ESD protection diode. There is no diode connection to VDD. If VIN

greater than VIO_MIN (= VSS-0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If

this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting

resistor is calculated as R = (VIO_MIN - VIN)/|IICIO|.

2. Open drain outputs must be pulled to VDD.

7.2.2 LVD, HVD, and POR operating requirements

Table 13. VDD supply LVD, HVD, and POR operating requirements

Symbol

Description

Min.

Typ.

Max.

Unit

Notes

VPOR

Falling VDD POR detect voltage

0.8

1.1

1.5

—

VLVDH

Falling low-voltage detect threshold — high

range (LVDV = 01)

2.48

2.56

2.64

—

VLVW1H

VLVW2H

VLVW3H

VLVW4H

Low-voltage warning thresholds — high range

• Level 1 falling (LVWV = 00)

• Level 2 falling (LVWV = 01)

• Level 3 falling (LVWV = 10)

• Level 4 falling (LVWV = 11)

2.62

2.72

2.82

2.92

2.70

2.80

2.90

3.00

2.78

2.88

2.98

3.08

VHYSH

Low-voltage inhibit reset/recover hysteresis —

high range

—

±60

—

VLVDL

Falling low-voltage detect threshold — low

range (LVDV=00)

1.54

1.60

1.66

—

VLVW1L

VLVW2L

VLVW3L

VLVW4L

Low-voltage warning thresholds — low range

• Level 1 falling (LVWV = 00)

• Level 2 falling (LVWV = 01)

• Level 3 falling (LVWV = 10)

• Level 4 falling (LVWV = 11)

1.74

1.84

1.94

2.04

1.80

1.90

2.00

2.10

1.86

1.96

2.06

2.16

VHYSL

Low-voltage inhibit reset/recover hysteresis —

low range

—

±40

—

VBG

Bandgap voltage reference

0.97

1.00

1.03

—

tLPO

Internal low power oscillator period — factory

trimmed

900

1000

1100

μs

—

Table continues on the next page...

General

K32 L2A Microcontroller with 512 KB Flash and 128 KB SRAM, Rev. 3, 02/2021

NXP Semiconductors

K32L2AX датащи(PDF) 37 Page - NXP Semiconductors

K32L2AX датащи(HTML) 37 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96

датащи скачать

ссылки URL