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MPC8610EC датащи(PDF) 89 Page - Freescale Semiconductor, Inc |
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MPC8610EC датащи(HTML) 89 Page - Freescale Semiconductor, Inc |
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89 / 96 page ![]() Hardware Design Considerations MPC8610 Integrated Host Processor Hardware Specifications, Rev. 0 Freescale Semiconductor 89 Figure 57. MPC8610 Thermal Model 3.14.5 Temperature Diode The MPC8610 has a temperature diode on the microprocessor that can be used in conjunction with other system temperature monitoring devices (such as Analog Devices, ADT7461™). These devices use the negative temperature coefficient of a diode operated at a constant current to determine the temperature of the microprocessor and its environment. For proper operation, the monitoring device used should auto-calibrate the device by canceling out the VBE variation of each MPC8610’s internal diode. The following are the specifications of the MPC8610 on-board temperature diode: Vf > 0.40 V Vf < 0.90 V Operating range 2–300 μA Diode leakage < 10 nA @ 125 °C An approximate value of the ideality may be obtained by calibrating the device near the expected operating temperature. Ideality factor is defined as the deviation from the ideal diode equation: Bump and Underfill Die Substrate Solder/Air Die Substrate Side View of Model (Not to Scale) Top View of Model (Not to Scale) x y z Conductivity Value Unit Die (8.5 x 9.7 x 0.86mm) Silicon Temperature dependent Bump and Underfill (8.5 × 9.7 × 0.07 mm) Collapsed Resistance kz 8.1 W/(m • K) Substrate (29 × 29 × 1.18 mm) kx 23.3 W/(m • K) ky 23.3 kz 0.95 Solder and Air (29 × 29 × 0.4 mm) kx 0.034 W/(m • K) ky 0.034 kz 12.1 Ifw = Is e – 1 qVf ___ nKT |
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