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TMPR4955AF датащи(PDF) 157 Page - Toshiba Semiconductor |
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TMPR4955AF датащи(HTML) 157 Page - Toshiba Semiconductor |
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157 / 168 page ![]() Chapter 10 Electrical Characteristics 10-1 Chapter 10. Electrical Characteristics ESD Precautions: For handling precautions, see Section 1.1, Electrostatic Discharge (ESD), in the chapter on General Safety Precautions and Usage Considerations. 10.1 Electrical Characteristics of TMPR4955AF 10.1.1 Absolute Maximum Ratings VSS = 0 V (GND) Parameter Symbol Ratings Unit Supply voltage (for I/O) VccIOMax −0.5 ∼ 3.9 V Supply voltage (for internal) VccIntMax −0.5 ∼ 3.0 V Input voltage (*1) VIN −0.5 ∼ V CC IO + 0.3 V Storage Temperature TSTG −65 ∼ + 150 °C Note: The absolute maximum ratings are rated values which must not be exceeded during operation, even for an instant. Any one of the ratings must not be exceeded. If any absolute maximum rating is exceeded, a device may break down or its performance may be degraded, causing it to catch fire or explode resulting in injury to the user. Thus, when designing products which include this device, ensure that no absolute maximum rating value will ever be exceeded. (*1) VIN Min = −1.5 V for pulse width less than 10 ns. 10.1.2 Recommended Operating Conditions VSS = 0 V (GND) Parameter Symbol Conditions Min Max Unit Supply Voltage (for I/O) VccIO 3.1 3.5 V Supply Voltage (for internal) VccInt 1.4 1.6 V Operating Case Temperature TC 0 +70 °C Note: The recommended operating conditions for a device are operating conditions under which it can be guaranteed that the device will operate as specified. If the device is used under operating conditions other than the recommended operating conditions (supply voltage, operating temperature range, specified AN and DC values etc.), malfunction may occur. Thus, when designing products which include this device, ensure that the recommended operating conditions for the device are always adhered to. |
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