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MMPF0100Z датащи(PDF) 72 Page - NXP Semiconductors |
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MMPF0100Z датащи(HTML) 72 Page - NXP Semiconductors |
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72 / 128 page ![]() 72 NXP Semiconductors PF0100Z FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS Figure 22. SW4 efficiency waveforms 6.4.5 Boost regulator SWBST is a boost regulator with a programmable output from 5.0 V to 5.15 V. SWBST can supply the VUSB regulator for the USB PHY in OTG mode, as well as the VBUS voltage. Note that the parasitic leakage path for a boost regulator causes the SWBSTOUT and SWBSTFB voltage to be a Schottky drop below the input voltage whenever SWBST is disabled. The switching NMOS transistor is integrated on-chip. Figure 23 shows the block diagram and component connection for the boost regulator. RSW4DIS Discharge Resistance – 600 – W Notes 56. When the output is set to > 2.6 V, the output follows the input down when VIN gets near 2.8 V. 57. The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation: (VINSW4 - VSW4) = ISW4* (DCR of Inductor +RONSW4P + PCB trace resistance). Table 86. SW4 electrical characteristics (continued) All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V, ISW4 = 100 mA, SW4_PWRSTG[2:0] = [101], typical external component values, fSW4 = 2.0 MHz, single/dual phase and independent mode, unless otherwise noted. Typical values are characterized at VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V, ISW4 = 100 mA, SW4_PWRSTG[2:0] = [101], and 25 °C, unless otherwise noted. Symbol Parameter Min. Typ. Max. Unit Notes Load current (mA) 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 1000 PFM - Vout = 1.8V APS - Vout = 1.8V PWM - Vout = 1.8V PWM - Vout = 0.75V |
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