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MMPF0100Z датащи(PDF) 48 Page - NXP Semiconductors

номер детали MMPF0100Z
подробное описание детали  14 channel configurable power management integrated circuit
PDF  128 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMPF0100Z датащи(HTML) 48 Page - NXP Semiconductors

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NXP Semiconductors
PF0100Z
FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS
SW1C (independent) (continued)
VSW1COSH
Start-up overshoot
ISW1C = 0 mA
DVS clk = 25 mV/4
μs, VIN = VINSW1C = 4.5 V, VSW1C = 1.875 V
––
66
mV
tONSW1C
Turn-on time
Enable to 90% of end value
ISW1C = 0 mA
DVS clk = 25 mV/4
μs, VIN = VINSW1C = 4.5 V, VSW1C = 1.875 V
500
µs
fSW1C
Switching frequency
SW1CFREQ[1:0] = 00
SW1CFREQ[1:0] = 01
SW1CFREQ[1:0] = 10
1.0
2.0
4.0
MHz
ηSW1C
Efficiency
•VIN = 3.6 V, fSW1C = 2.0 MHz, LSW1C = 1.0 μH
PFM, 0.9 V, 1.0 mA
PFM, 1.2 V, 50 mA
APS, PWM, 1.2 V, 400 mA
APS, PWM, 1.2 V, 600 mA
APS, PWM, 1.2 V, 1000 mA
APS, PWM, 1.2 V, 2000 mA
77
78
86
84
78
68
%
ΔVSW1C
Output ripple
–10–
mV
VSW1CLIR
Line regulation (APS, PWM)
20
mV
VSW1CLOR
DC load regulation (APS, PWM)
20
mV
VSW1CLOTR
Transient load regulation
• Transient load = 0.0 mA to 1.0 A, di/dt = 100 mA/
μs
Overshoot
Undershoot
50
50
mV
ISW1CQ
Quiescent current
PFM mode
APS mode
22
145
µA
RONSW1CP
SW1C P-MOSFET RDS(on)
at VINSW1C = 3.3 V
184
206
m
Ω
RONSW1CN
SW1C N-MOSFET RDS(on)
at VINSW1C = 3.3 V
211
260
m
Ω
ISW1CPQ
SW1C P-MOSFET leakage current
VINSW1C = 4.5 V
10.5
µA
ISW1CNQ
SW1C N-MOSFET leakage current
VINSW1C = 4.5 V
––
3.5
µA
RSW1CDIS
Discharge resistance
600
W
Notes
42.
Supports the Coremark and 3D MM benchmark maximum current value of 2500 mA of the VDD_SOC_IN domain in the i.MX 6Dual/Quad
processors.
43.
Current rating of SW1AB supports the power virus mode of operation of the i.MX 6X processor.
Table 53. SW1A/B/C electrical characteristics (continued)
All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V,
ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], typical external component values, fSW1x = 2.0 MHz, unless otherwise noted. Typical
values are characterized at VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], and 25 °C, unless
otherwise noted.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Notes



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