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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMPF0100Z датащи(PDF) 26 Page - NXP Semiconductors |
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MMPF0100Z датащи(HTML) 26 Page - NXP Semiconductors |
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26 / 128 page  26 NXP Semiconductors PF0100Z FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS Active mode – AC tONREFDDR Turn-on Time Enable to 90% of end value VINREFDDR = 1.2 V, 1.8 V IREFDDR = 0.0 mA – – 100 μs tOFFREFDDR Turn-off time Disable to 10% of initial value VINREFDDR = 1.2 V, 1.8 V IREFDDR = 0.0 mA –– 10 ms VREFDDROSH Start-up overshoot VINREFDDR = 1.2 V, 1.8 V IREFDDR = 0.0 mA –1.0 6.0 % VREFDDRTLR Transient load response VINREFDDR = 1.2 V, 1.8 V –5.0 – mV Notes 32. When VREFDDR is off there is a quiescent current of 1.5 μA typical. Table 21. VREFDDR electrical characteristics (continued) PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, IREFDDR = 0.0 mA, VINREFDDR = 1.5 V and typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, IREFDDR = 0.0 mA, VINREFDDR = 1.5 V, and 25 °C, unless otherwise noted. Symbol Parameter Min. Typ. Max. Unit Notes |
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