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MMPF0100Z датащи(PDF) 46 Page - NXP Semiconductors |
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MMPF0100Z датащи(HTML) 46 Page - NXP Semiconductors |
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46 / 128 page ![]() 46 NXP Semiconductors PF0100Z FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS SW1A/B/C (single phase) (continued) ISW1ABCQ Quiescent current PFM mode APS mode – – 18 145 – – µA RSW1ABCDIS Discharge resistance – 600 – W SW1A/B (single/dual phasE) VINSW1A VINSW1B Operating input voltage 2.8 – 4.5 V VSW1AB Nominal output voltage – Table 40 –V VSW1ABACC Output voltage accuracy • PWM, APS, 2.8 V < VIN < 4.5 V, 0 < ISW1AB < 2.5 A 0.625 V ≤ VSW1AB ≤ 1.450 V 1.475 V ≤ VSW1AB ≤ 1.875 V • PFM, steady state, 2.8 V < VIN < 4.5 V, 0 < ISW1AB < 150 mA 0.625 V < VSW1AB < 0.675 V 0.7 V < VSW1AB < 0.85 V 0.875 V < VSW1AB < 1.875 V -25 -3.0% -65 -45 -3.0% - - – – – 25 3.0% -65 -45 3.0% mV % ISW1AB Rated output load current, 2.8 V < VIN < 4.5 V, 0.625 V < VSW1AB < 1.875 V – – 2500 mA (43) ISW1ABLIM Current limiter peak current detection • SW1A/B single phase (current through inductor) SW1ABILIM = 0 SW1ABILIM = 1 • SW1A/B dual phase (current through inductor per phase) SW1ABILIM = 0 SW1ABILIM = 1 4.5 3.3 2.2 1.6 6.5 4.9 3.2 2.4 8.5 6.4 4.3 3.2 A (43) VSW1ABOSH Start-up overshoot ISW1AB = 0.0 mA DVS clk = 25 mV/4 μs, VIN = VINSW1x = 4.5 V, VSW1AB = 1.875 V –– 66 mV tONSW1AB Turn-on time Enable to 90% of end value ISW1AB = 0.0 mA DVS clk = 25 mV/4 μs, VIN = VINSW1x = 4.5 V, VSW1AB = 1.875 V – – 500 µs fSW1AB Switching frequency SW1ABFREQ[1:0] = 00 SW1ABFREQ[1:0] = 01 SW1ABFREQ[1:0] = 10 – – – 1.0 2.0 4.0 – – – MHz ηSW1AB Efficiency (single phase) •VIN = 3.6 V, fSW1AB = 2.0 MHz, LSW1AB = 1.0 μH PFM, 0.9 V, 1.0 mA PFM, 1.2 V, 50 mA APS, PWM, 1.2 V, 500 mA APS, PWM, 1.2 V, 750 mA APS, PWM, 1.2 V, 1250 mA APS, PWM, 1.2 V, 2500 mA – – – – – – 82 84 86 87 83 75 – – – – – – % ΔVSW1AB Output ripple –10– mV VSW1ABLIR Line regulation (APS, PWM) – – 20 mV Table 53. SW1A/B/C electrical characteristics (continued) All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], typical external component values, fSW1x = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted. Symbol Parameter Min. Typ. Max. Unit Notes |
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