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MMPF0100Z датащи(PDF) 24 Page - NXP Semiconductors

номер детали MMPF0100Z
подробное описание детали  14 channel configurable power management integrated circuit
PDF  128 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMPF0100Z датащи(HTML) 24 Page - NXP Semiconductors

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NXP Semiconductors
PF0100Z
FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS
6.3.1.1
External components
6.3.2
VREFDDR voltage reference
VREFDDR is an internal PMOS half supply voltage follower capable of supplying up to 10 mA. The output voltage is at one half the input
voltage. Its typically used as the reference voltage for DDR memories. A filtered resistor divider is utilized to create a low frequency pole.
This divider uses a voltage follower to drive the load.
Figure 7. VREFDDR block diagram
6.3.2.1
VREFDDR control register
The VREFDDR voltage reference is controlled by a single bit in VREFDDCRTL register in Table 19.
VCOREREF (bandgap / regulator reference)
VCOREREF
Output voltage (28)
–1.2
–
V
VCOREREFACC
Absolute accuracy
–
0.5
–
%
VCOREREFTACC
Temperature drift
–
0.25
–
%
Notes
28.
3.0 V < VIN < 4.5 V, no external loading on VCOREDIG, VCORE, or VCOREREF. Extended operation down to UVDET, but no system malfunction.
29.
For information only
Table 18. External components for core voltages
Regulator
Capacitor value (
μF)
VCOREDIG
1.0
VCORE
1.0
VCOREREF
0.22
Table 17. Core voltages electrical specifications(29) (continued)
PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 2.8 V to 4.5 V, LICELL = 1.8 V to 3.3 V, and typical external
component values. Typical values are characterized at VIN = 3.6 V, LICELL = 3.0 V, and 25 °C, unless otherwise noted.
Symbol
Parameters
Min.
Typ.
Max.
Units
Notes
VINREFDDR
VREFDDR
VINREFDDR
CHALF1
Discharge
+
_
VHALF
VREFDDR
CHALF2
100 nf
100 nf
CREFDDR
1.0 uf



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