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MMPF0100Z датащи(PDF) 55 Page - NXP Semiconductors |
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MMPF0100Z датащи(HTML) 55 Page - NXP Semiconductors |
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55 / 128 page ![]() NXP Semiconductors 55 PF0100Z FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS Figure 16. SW2 efficiency waveforms Switch mode supply SW2 (continued) ISW2Q Quiescent current PFM mode APS mode (low output voltage settings) APS mode (high output voltage settings) – – – 23 145 305 – – – µA RONSW2P SW2 P-MOSFET RDS(on) at VIN = VINSW2 = 3.3 V – 190 209 m Ω RONSW2N SW2 N-MOSFET RDS(on) at VIN = VINSW2 = 3.3 V – 212 255 m Ω ISW2PQ SW2 P-MOSFET leakage current VIN = VINSW2 = 4.5 V –– 12 µA ISW2NQ SW2 N-MOSFET leakage current VIN = VINSW2 = 4.5 V –– 4.0 µA RSW2DIS Discharge resistance – 600 – W Notes 47. When output is set to > 2.6 V the output will follow the input down when VIN gets near 2.8 V. 48. The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation: (VINSW2 - VSW2) = ISW2* (DCR of Inductor +RONSW2P + PCB trace resistance). 49. Applies to NP/F9/FA versions Table 62. SW2 electrical characteristics (continued) All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], typical external component values, fSW2 = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted. Symbol Parameter Min. Typ. Max. Unit Notes 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 1000 PFM - Vout = 3.15V APS - Vout = 3.15V PWM - Vout = 3.15V Load current (mA) |
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