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LPC2917/01 датащи(PDF) 69 Page - NXP Semiconductors |
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LPC2917/01 датащи(HTML) 69 Page - NXP Semiconductors |
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69 / 86 page ![]() LPC2917_19_01_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 17 June 2009 69 of 86 NXP Semiconductors LPC2917/01; LPC2919/01 ARM9 microcontroller with CAN and LIN [1] All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at Tamb =85 °C ambient temperature on wafer level. Cased products are tested at Tamb =25 °C (final testing). Both pre-testing and final testing use correlated test conditions to cover the specified temperature and power supply voltage range. [2] See Table 26. [3] This parameter is not part of production testing or final testing, hence only a typical value is stated. [4] Oscillator start-up time depends on the quality of the crystal. For most crystals it takes about 1000 clock pulses until the clock is fully stable. Jitter specification for CAN tjit(cc)(p-p) cycle to cycle jitter (peak-to-peak value) on CAN TXDC pin [3] - 0.4 1 ns Table 35. Dynamic characteristics …continued VDD(CORE) =VDD(OSC_PLL); VDD(IO) = 2.7 V to 3.6 V; VDDA(ADC3V3) = 3.0 V to 3.6 V; all voltages are measured with respect to ground; positive currents flow into the IC; unless otherwise specified.[1] Symbol Parameter Conditions Min Typ Max Unit Fig 25. Low-power ring oscillator thermal characteristics temperature ( °C) −40 85 60 10 35 −15 002aae373 500 490 510 520 fref(RO) (kHz) 480 1.9 V 1.8 V 1.7 V |
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