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LPC2917/01 датащи(PDF) 21 Page - NXP Semiconductors |
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LPC2917/01 датащи(HTML) 21 Page - NXP Semiconductors |
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21 / 86 page ![]() LPC2917_19_01_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 17 June 2009 21 of 86 NXP Semiconductors LPC2917/01; LPC2919/01 ARM9 microcontroller with CAN and LIN When an AHB data port read transfer requires data from a different flash word to that involved in the previous read transfer, a new flash read is done and wait states are given until the new read data is available. With dual buffering, a secondary buffer line is used, the output of the flash being considered as the primary buffer. On a primary buffer, hit data can be copied to the secondary buffer line, which allows the flash to start a speculative read of the next flash word. Both buffer lines are invalidated after: • Initialization • Configuration-register access • Data-latch reading • Index-sector reading The modes of operation are listed in Table 9. 6.8.2 Pin description The flash memory controller has no external pins. However, the flash can be programmed via the JTAG pins, see Section 6.6.3. 6.8.3 Clock description The flash memory controller is clocked by CLK_SYS_FMC, see Section 6.7.2. 6.8.4 Flash layout The ARM processor can program the flash for ISP (In-System Programming) and IAP (In- Application Programming). Note that the flash always has to be programmed by ‘flash words’ of 128 bits (four 32-bit AHB bus words, hence 16 bytes). The flash memory is organized into eight ‘small’ sectors of 8 kB each and up to 11 ‘large’ sectors of 64 kB each. The number of large sectors depends on the device type. A sector must be erased before data can be written to it. The flash memory also has sector-wise protection. Writing occurs per page which consists of 4096 bits (32 flash words). A small sector contains 16 pages; a large sector contains 128 pages. Table 9. Flash read modes Synchronous timing No buffer line for single (non-linear) reads; one flash-word read per word read Single buffer line default mode of operation; most recently read flash word is kept until another flash word is required Asynchronous timing No buffer line one flash-word read per word read Single buffer line most recently read flash word is kept until another flash word is required Dual buffer line, single speculative on a buffer miss a flash read is done, followed by at most one speculative read; optimized for execution of code with small loops (less than eight words) from flash Dual buffer line, always speculative most recently used flash word is copied into second buffer line; next flash-word read is started; highest performance for linear reads |
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