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LPC2917/01 датащи(PDF) 21 Page - NXP Semiconductors

номер детали LPC2917/01
подробное описание детали  ARM9 microcontroller with CAN and LIN
PDF  86 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
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LPC2917/01 датащи(HTML) 21 Page - NXP Semiconductors

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LPC2917_19_01_2
© NXP B.V. 2009. All rights reserved.
Preliminary data sheet
Rev. 02 — 17 June 2009
21 of 86
NXP Semiconductors
LPC2917/01; LPC2919/01
ARM9 microcontroller with CAN and LIN
When an AHB data port read transfer requires data from a different flash word to that
involved in the previous read transfer, a new flash read is done and wait states are given
until the new read data is available.
With dual buffering, a secondary buffer line is used, the output of the flash being
considered as the primary buffer. On a primary buffer, hit data can be copied to the
secondary buffer line, which allows the flash to start a speculative read of the next flash
word.
Both buffer lines are invalidated after:
Initialization
Configuration-register access
Data-latch reading
Index-sector reading
The modes of operation are listed in Table 9.
6.8.2 Pin description
The flash memory controller has no external pins. However, the flash can be programmed
via the JTAG pins, see Section 6.6.3.
6.8.3 Clock description
The flash memory controller is clocked by CLK_SYS_FMC, see Section 6.7.2.
6.8.4 Flash layout
The ARM processor can program the flash for ISP (In-System Programming) and IAP (In-
Application Programming). Note that the flash always has to be programmed by ‘flash
words’ of 128 bits (four 32-bit AHB bus words, hence 16 bytes).
The flash memory is organized into eight ‘small’ sectors of 8 kB each and up to 11 ‘large’
sectors of 64 kB each. The number of large sectors depends on the device type. A sector
must be erased before data can be written to it. The flash memory also has sector-wise
protection. Writing occurs per page which consists of 4096 bits (32 flash words). A small
sector contains 16 pages; a large sector contains 128 pages.
Table 9.
Flash read modes
Synchronous timing
No buffer line
for single (non-linear) reads; one flash-word read per word read
Single buffer line
default mode of operation; most recently read flash word is kept until
another flash word is required
Asynchronous timing
No buffer line
one flash-word read per word read
Single buffer line
most recently read flash word is kept until another flash word is
required
Dual buffer line, single
speculative
on a buffer miss a flash read is done, followed by at most one
speculative read; optimized for execution of code with small loops
(less than eight words) from flash
Dual buffer line, always
speculative
most recently used flash word is copied into second buffer line; next
flash-word read is started; highest performance for linear reads



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