ST72324BJ2 datasheet(18/188 Pages) STMICROELECTRONICS

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Flash program memory

ST72324B

18/188

Flash program memory

4.1

Introduction

The ST7 dual voltage High Density Flash (HDFlash) is a non-volatile memory that can be

electrically erased as a single block or by individual sectors and programmed on a byte-by-

byte basis using an external VPP supply.

The HDFlash devices can be programmed and erased off-board (plugged in a programming

tool) or on-board using ICP (in-circuit programming) or IAP (in-application programming).

The array matrix organization allows each sector to be erased and reprogrammed without

affecting other sectors.

4.2

Main features

●

3 Flash programming modes:

–

Insertion in a programming tool. In this mode, all sectors including option bytes

can be programmed or erased.

–

ICP (in-circuit programming). In this mode, all sectors including option bytes can

be programmed or erased without removing the device from the application board.

–

IAP (in-application programming). In this mode, all sectors, except Sector 0, can

be programmed or erased without removing the device from the application board

and while the application is running.

●

ICT (in-circuit testing) for downloading and executing user application test patterns in

RAM

●

Readout protection

●

erasing

4.3

Structure

The Flash memory is organized in sectors and can be used for both code and data storage.

Depending on the overall Flash memory size in the microcontroller device, there are up to

three user sectors (seeTable 3). Each of these sectors can be erased independently to avoid

unnecessary erasing of the whole Flash memory when only a partial erasing is required.

The first two sectors have a fixed size of 4 Kbytes (see Figure 7). They are mapped in the

upper part of the ST7 addressing space so the reset and interrupt vectors are located in

Sector 0 (F000h-FFFFh).

Table 3.

Sectors available in Flash devices

Flash size (bytes)

Available sectors

Sector 0

Sectors 0, 1

>8K

Sectors 0, 1, 2

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