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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IMX8MPCEC датащи(PDF) 38 Page - NXP Semiconductors |
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IMX8MPCEC датащи(HTML) 38 Page - NXP Semiconductors |
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38 / 111 page  i.MX 8M Plus Applications Processor Datasheet for Consumer Products, Rev. 0, 03/2021 38 NXP Semiconductors Electrical characteristics 3.4.2 DDR I/O DC electrical characteristics The DDR I/O pads support LPDDR 4 and DDR4 operational modes. The DDR Memory Controller (DDRMC) is compliant with JEDEC-compliant SDRAMs. DDRMC operation is contingent upon the board’s DDR design adherence to the DDR design and layout requirements stated in the hardware development guide for the i.MX 8M Plus application processor. 3.4.3 LVDS I/O DC parameters The LVDS interface complies with TIA/EIA 644-A standard. See TIA/EIA STANDARD 644-A, “Electrical Characteristics of Low Voltage Differential Signaling (LVDS) Interface Circuits” for details. Table 26. GPIO DC parameters Parameter Symbol Test Conditions Min Typ Max Unit High-level output voltage VOH (1.8 V) IOH = 1.6/3.2/6.4/9.6 mA (1.8 V) IOH = 2/4/8/12 mA (3.3 V) 0.8 x VDD — VDD V VOH (3.3 V) 0.8 x VDD — VDD V Low-level output voltage VOL (1.8 V) IOL = 1.6/3.2/6.4/9.6 mA (1.8 V) IOL = 2/4/8/12 mA (3.3 V) 0 — 0.2 x VDD V VOL (3.3 V) 0 — 0.2 x VDD V High-level input voltage VIH — 0.7 x VDD — VDD + 0.3 V Low-level input voltage VIL — -0.3 — 0.3 x VDD V Pull-up resistor — VDD = 1.65 - 1.95V Temp = 0 - 95 oC 12 22 49 K Pull-down resistor — 13 23 48 K Pull-up resistor — VDD = 3.0 - 3.6V Temp = 0 - 95 oC 18 37 72 K Pull-down resistor — 24 43 87 K High level input current IIH — -4 — 4 µA Low level input current IIL — -0.7 — 0.7 µA Table 27. Additional leakage parameters Parameter Symbol Pins Min Max Unit High level input current IIH USBx_Dx -30 30 µA MIPI_CSI -4 4 ONOFF, POR_B -1 1 Low level input current IIL USBx_Dx -6 6 µA MIPI_CSI, ONOFF, POR_B -0.7 0.7 |
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