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IMX8MPCEC датащи(PDF) 29 Page - NXP Semiconductors |
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IMX8MPCEC датащи(HTML) 29 Page - NXP Semiconductors |
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29 / 111 page ![]() Electrical characteristics i.MX 8M Plus Applications Processor Datasheet for Consumer Products, Rev. 0, 03/2021 NXP Semiconductors 29 • RTC_XTALO is connected to NVCC_SNVS_1P8 (1.8 V) through a 100 Kohm resistor. i.MX 8M Plus has an integrated ring oscillator that allows the system to have an immediate clock. This clock automatically switches to OSC32K XTAL when available. Additionally, if the clock monitor determines that the OSC32K oscillation is not present, then the source of the 32 kHz clock will automatically switch to the internal ring oscillator of lesser frequency accuracy. CAUTION The internal ring oscillator is not meant to be used in customer applications, due to gross frequency variation over wafer processing, temperature, and supply voltage. These variations will cause timing issues to many different circuits that use the internal ring oscillator for reference; and, if this timing is critical, application issues will occur. To prevent application issues, it is recommended to only use an external crystal or an accurate external clock. If this recommendation is not followed, NXP cannot guarantee full compliance of any circuit using this clock. Table 15 shows the external input clock for OSC32K. When connecting to 24 MHz clock, following connections are recommended: • 1.8 V square waveform to XTALI_24M • XTALO_24M is connected to VDD_24M_XTAL_1P8 through a 400 ohm resistor. Table 16 shows the external input clock for 24 MHz. 3.1.6.1 On-chip OSC32K This block implements an amplifier that when combined with a suitable quartz crystal and external load Table 15. External input clock for OSC32K Symbol Min Typ Max Unit Frequency f — 32.768 — kHz RTC_XTALI VIH 0.7 x NVCC_SNVS_1P8 — NVCC_SNVS_1P8 V VIL 0 — 0.3 x NVCC_SNVS_1P8 V IIH -12 — 12 µA IIL -12 — 12 µA Table 16. External input clock for 24 MHz Symbol Min Typ Max Unit Frequency f — 24 — MHz XTALI_24M VIH 0.7 x Vdd —Vdd + 0.3 V VIL -0.3 — 0.3 x Vdd V IIH -12 — 12 µA IIL -12 — 12 µA |
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