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MPC8560CPX667JC датащи(PDF) 10 Page - NXP Semiconductors |
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MPC8560CPX667JC датащи(HTML) 10 Page - NXP Semiconductors |
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10 / 108 page ![]() MPC8560 Integrated Processor Hardware Specifications, Rev. 4.2 10 Freescale Semiconductor Electrical Characteristics NOTE If the items on line 2 must precede items on line 1, please ensure that the delay will not exceed 500 ms and the power sequence is not done greater than once per day in production environment. NOTE From a system standpoint, if the I/O power supplies ramp prior to the VDD core supply, the I/Os on the MPC8560 may drive a logic one or zero during power-up. 2.1.3 Recommended Operating Conditions Table 2 provides the recommended operating conditions for the MPC8560. Note that the values in Table 2 are the recommended and tested operating conditions. Proper device operation outside of these conditions is not guaranteed. Table 2. Recommended Operating Conditions Characteristic Symbol Recommended Value Unit Core supply voltage For devices rated at 667 and 833 MHz For devices rated at 1 GHz VDD 1.2 V ± 60 mV 1.3 V ± 50 mV V PLL supply voltage For devices rated at 667 and 833 MHz For devices rated at 1 GHz AVDD 1.2 V ± 60 mV 1.3 V ± 50 mV V DDR DRAM I/O voltage GVDD 2.5 V ± 125 mV V Three-speed Ethernet I/O voltage LVDD 3.3 V ± 165 mV 2.5 V ± 125 mV V CPM, PCI/PCI-X, local bus, RapidIO, 10/100 Ethernet, MII management, DUART, system control and power management, I2C, and JTAG I/O voltage OVDD 3.3 V ± 165 mV V Input voltage DDR DRAM signals MVIN GND to GVDD V DDR DRAM reference MVREF GND to GVDD/2 V Three-speed Ethernet signals LVIN GND to LVDD V CPM, PCI/PCI-X, local bus, RapidIO, 10/100 Ethernet, MII management, DUART, SYSCLK, system control and power management, I2C, and JTAG signals OVIN GND to OVDD V Die-junction temperature Tj 0 to 105 °C |
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