MPC8560CPX667JC datasheet(18/108 Pages) NXP

18 / 108 page

MPC8560 Integrated Processor Hardware Specifications, Rev. 4.2

Freescale Semiconductor

DDR SDRAM

6 DDR SDRAM

This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the

MPC8560.

6.1 DDR SDRAM DC Electrical Characteristics

Table 13 provides the recommended operating conditions for the DDR SDRAM component(s) of the

MPC8560.

Table 14 provides the DDR capacitance.

Table 13. DDR SDRAM DC Electrical Characteristics

Parameter/Condition

Symbol

Min

Max

Unit

Notes

I/O supply voltage

GVDD

2.375

2.625

I/O reference voltage

MVREF

0.49

× GVDD

0.51

× GVDD

I/O termination voltage

VTT

MVREF – 0.04

MVREF + 0.04

Input high voltage

VIH

MVREF + 0.18

GVDD + 0.3

Input low voltage

VIL

–0.3

MVREF – 0.18

Output leakage current

IOZ

–10

μA5

Output high current (VOUT = 1.95 V)

IOH

–15.2

—

Output low current (VOUT = 0.35 V)

IOL

15.2

—

MVREF input leakage current

IVREF

—100

μA—

Notes:

1.GVDD is expected to be within 50 mV of the DRAM GVDD at all times.

2.MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver.

Peak-to-peak noise on MVREF may not exceed ±2% of the DC value.

3.VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected

to be equal to MVREF. This rail should track variations in the DC level of MVREF.

4.VIH can tolerate an overshoot of 1.2V over GVDD for a pulse width of ≤3 ns, and the pulse width cannot be greater

than tMCK. VIL can tolerate an undershoot of 1.2V below GND for a pulse width of ≤3 ns, and the pulse width

cannot be greater than tMCK.

5.Output leakage is measured with all outputs disabled, 0 V

≤ VOUT ≤ GVDD.

Table 14. DDR SDRAM Capacitance

Parameter/Condition

Symbol

Min

Max

Unit

Notes

Input/output capacitance: DQ, DQS, MSYNC_IN

CIO

Delta input/output capacitance: DQ, DQS

CDIO

—0.5

Note:

1.This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak to peak) = 0.2 V.

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