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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DA16200 датащи(PDF) 22 Page - Renesas Technology Corp |
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DA16200 датащи(HTML) 22 Page - Renesas Technology Corp |
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22 / 154 page  DA16200 Ultra Low Power Wi-Fi SoC Datasheet Revision 3.6 04-Jan-2023 CFR0011-120-00 22 of 153 © 2023 Renesas Electronics 5.3.2 DC Parameters for RTC Block There are several control pins in the RTC block. For details, see Section 7.4. Table 8: DC Parameters for RTC Block, 3.3 V VBAT Parameter Symbol Condition Min Typ Max Units Input Low Voltage VIL Guaranteed logic Low level VSS 0.6 V Input High Voltage VIH Guaranteed logic High level 2.3 VBAT V (RTC block: RTC_PWR_KEY, RTC_WAKE_UP, RTC_WAKE_UP2) Table 9: DC Parameters for RTC Block, 2.1 V VBAT Parameter Symbol Condition Min Typ Max Units Input Low Voltage VIL Guaranteed logic Low level VSS 0.3 V Input High Voltage VIH Guaranteed logic High level 1.6 VBAT V (RTC block: RTC_PWR_KEY, RTC_WAKE_UP, RTC_WAKE_UP2) 5.3.3 DC Parameters for Digital Wake-Up Several GPIOs can be used for wake-up. For details, see Section 7.4.1. To use Digital Wake-up, the IO voltage should not be higher than the VBAT value. Table 10: DC Parameters for Digital Wake-Up, 3.3 V VBAT and 1.8/3.3 V IO Parameter Symbol Condition Min Typ Max Units Input Low Voltage VIL Guaranteed logic Low level VSS 0.5 V Input High Voltage VIH Guaranteed logic High level 1.4 DVDD V (DVDD= 1.8/3.3 V, VDD_DIO1, VDD_DIO2 Logic Level, DVDD should not be higher than the VBAT value) Table 11: DC Parameters for Digital Wake-Up, 2.1 V VBAT and 1.8 V IO Parameter Symbol Condition Min Typ Max Units Input Low Voltage VIL Guaranteed logic Low level VSS 0.3 V Input High Voltage VIH Guaranteed logic High level 1.3 DVDD V (DVDD= 1.8 V, VDD_DIO1, VDD_DIO2 Logic Level, DVDD should not be higher than the VBAT value) |
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