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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32WB50CG датащи(PDF) 104 Page - STMicroelectronics |
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STM32WB50CG датащи(HTML) 104 Page - STMicroelectronics |
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104 / 119 page  Electrical characteristics STM32WB50CG STM32WB30CE 104/119 DS13047 Rev 5 6.3.21 Temperature sensor characteristics 6.3.22 VBAT monitoring characteristics 6.3.23 Timer characteristics The parameters given in the following tables are guaranteed by design. Refer to Section 6.3.17 for details on the input/output alternate function characteristics (output compare, input capture, external clock, PWM output). Table 75. TS characteristics Symbol Parameter Min Typ Max Unit TL(1) VTS linearity with temperature - ±1 ±2 °C Avg_Slope(2) Average slope 2.3 2.5 2.7 mV / °C V30 Voltage at 30 °C (±5 °C)(3) 0.742 0.760 0.785 V tSTART (TS_BUF)(1) Sensor buffer start-up time in continuous mode(4) -8 15 µs tSTART(1) Start-up time when entering in continuous mode(4) - 70 120 tS_temp(1) ADC sampling time when reading the temperature 5 - - IDD(TS)(1) Temperature sensor consumption from VDD, when selected by ADC -4.7 7 µA 1. Guaranteed by design. 2. Guaranteed by characterization results. 3. Measured at VDDA = 3.0 V ± 10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 9: Temperature sensor calibration values. 4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes. Table 76. VBAT monitoring characteristics(1) 1. 1.55 V < VBAT < 3.6 V. Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -3 x 39 - kΩ Q Ratio on VBAT measurement - 3 - - Er(2) 2. Guaranteed by design. Error on Q -10 - 10 % tS_vbat(2) ADC sampling time when reading VBAT 12 - - µs Table 77. VBAT charging characteristics Symbol Parameter Conditions Min Typ Max Unit RBC Battery charging resistor VBRS = 0 - 5 - kΩ VBRS = 1 - 1.5 - |
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