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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32WB50CG датащи(PDF) 87 Page - STMicroelectronics |
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STM32WB50CG датащи(HTML) 87 Page - STMicroelectronics |
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87 / 119 page  DS13047 Rev 5 87/119 STM32WB50CG STM32WB30CE Electrical characteristics 110 6.3.13 Flash memory characteristics Table 58. Flash memory characteristics(1) 1. Guaranteed by design. Symbol Parameter Conditions Typ Max Unit tprog 64-bit programming time - 81.7 90.8 µs tprog_row One row (64 double word) programming time Normal programming 5.2 5.5 ms Fast programming 3.8 4.0 tprog_page One page (4 KByte) programming time Normal programming 41.8 43.0 Fast programming 30.4 31.0 tERASE Page (4 KByte) erase time - 22.0 24.5 tME Mass erase time - 22.1 25.0 IDD Average consumption from VDD Write mode 3.4 - mA Erase mode 3.4 - Table 59. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) 1. Guaranteed by characterization results. Unit NEND Endurance TA = –10 to +85 °C 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 10 kcycles(2) at TA = 55 °C 30 10 kcycles(2) at TA = 85 °C 15 |
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