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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32WB50CG датащи(PDF) 79 Page - STMicroelectronics |
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STM32WB50CG датащи(HTML) 79 Page - STMicroelectronics |
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79 / 119 page  DS13047 Rev 5 79/119 STM32WB50CG STM32WB30CE Electrical characteristics 110 Note: For information on selecting the crystal refer to AN2867 “Oscillator design guide for STM8S, STM8A and STM32 microcontrollers” available from www.st.com. Figure 16. Typical application with a 32.768 kHz crystal Note: An external resistor is not required between OSC32_IN and OSC32_OUT, and it is forbidden to add one. 6.3.11 Internal clock source characteristics The parameters given in Table 52 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 20: General operating conditions. The provided curves are characterization results, not tested in production. Gmcritmax Maximum critical crystal gm LSEDRV[1:0] = 00 Low drive capability - - 0.50 µA/V LSEDRV[1:0] = 01 Medium low drive capability - - 0.75 LSEDRV[1:0] = 10 Medium high drive capability - - 1.70 LSEDRV[1:0] = 11 High drive capability - - 2.70 tSU(LSE)(2) Startup time VDD stabilized - 2 - s 1. Guaranteed by design. 2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) until a stable 32 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer. Table 51. Low-speed external user clock characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit MS30253V2 OSC32_IN OSC32_OUT Drive programmable amplifier fLSE 32.768 kHz resonator Resonator with integrated capacitors CL1 CL2 |
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