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STM32WB50CG датащи(PDF) 72 Page - STMicroelectronics |
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STM32WB50CG датащи(HTML) 72 Page - STMicroelectronics |
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72 / 119 page ![]() Electrical characteristics STM32WB50CG STM32WB30CE 72/119 DS13047 Rev 5 Table 41. Current consumption in Shutdown mode Symbol Parameter Conditions TYP MAX(1) Unit -VDD 0 °C 25 °C 40 °C 55 °C 85 °C 0 °C 25 °C 85 °C IDD (Shutdown) Supply current in Shutdown mode (backup registers retained) RTC disabled - 2.4 V 0.059 0.014 0.055 0.120 0.785 - - - µA 3.0 V 0.064 0.037 0.070 0.180 1.000 - 0.185 2.670 3.6 V 0.071 0.093 0.140 0.280 1.300 - 0.247 3.120 IDD (Shutdown with RTC) Supply current in Shutdown mode (backup registers retained) RTC enabled RTC clocked by LSE quartz (2) in low drive mode 2.4 V 0.425 0.405 0.460 0.540 1.200 - - - 3.0 V 0.535 0.535 0.595 0.700 1.500 - 0.664 2.990 3.6 V 0.695 0.720 0.790 0.940 2.000 - 0.790 3.730 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. Table 42. Current consumption in VBAT mode Symbol Parameter Conditions TYP MAX(1) Unit -VBAT 0 °C 25 °C 40 °C 55 °C 85 °C 0 °C 25 °C 40 °C 55 °C 85 °C IDD(VBAT) Backup domain supply current RTC disabled 2.4 V 1.00 2.00 5.00 12.0 60.0 - ---- nA 3.0 V 2.00 4.00 7.00 16.0 75.0 - ---- 3.6 V 7.00 15.0 23.0 42.0 170 - ---- RTC enabled and clocked by LSE quartz(2) 2.4 V 385 395 400 415 475 - ---- 3.0 V 495 505 515 530 600 - ---- 3.6 V 630 645 660 685 830 - ---- 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. Table 43. Current under Reset condition Symbol Conditions TYP MAX(1) Unit 0 °C 25 °C 40 °C 55 °C 85 °C 0 °C 25 °C 40 °C 55 °C 85 °C IDD(RST) 2.4 V - -- -- -- - - - µA 3.0 V - 550 - - - - 750 - - - 3.6 V - 750 - - - - - - - - 1. Guaranteed by characterization results, unless otherwise specified. |
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