STM32WB50CG datasheet(69/119 Pages) STMICROELECTRONICS

69 / 119 page

DS13047 Rev 5

69/119

STM32WB50CG STM32WB30CE

Electrical characteristics

110

Table 36. Current consumption in Low-power sleep modes, Flash memory in Power down

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-fHCLK

25 °C

55 °C

85 °C

25 °C

85 °C

IDD(LPSleep)

Supply current in

low-power sleep

mode

fHCLK = fMSI



All

peripherals

disabled

2 MHz

94.0

115

200

135

610

µA

1 MHz

56.5

86.0

170

94.2

560

400 kHz

40.5

66.5

150

68.0

540

100 kHz

27.5

57.5

140

54.6

539

1. Guaranteed by characterization results, unless otherwise specified.

Table 37. Current consumption in Stop 2 mode

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VDD 0 °C 25 °C 40 °C 55 °C 85 °C 0 °C 25 °C 85 °C

IDD

(Stop 2)

Supply current

in Stop 2

mode, RTC

disabled

BLE disabled

2.4 V 1.10 1.85

3.20

6.00

22.0

µA

3.0 V 1.10 1.85

3.25

6.10

22.0 1.60 4.17

57.9

3.6 V 1.15 1.95

3.35

6.25

23.0 1.69 4.40

58.6

IDD

(Stop 2

with

RTC)

Supply current

in Stop 2

mode, RTC

enabled, BLE

disabled

RTC clocked

by LSI

2.4 V 1.45 2.25

3.55

6.40

22.5

3.0 V 1.50 2.30

3.70

6.55

22.5 2.11 4.64

58.3

3.6 V 1.75 2.50

3.95

6.85

23.5 2.26 5.12

59.7

RTC clocked by

LSE quartz(2)

in low drive

mode

2.4 V 1.45 2.25

3.65

6.40

22.5

3.0 V 1.55 2.45

3.80

6.65

23.0 2.01 4.31

58.0

3.6 V 1.70 2.55

4.05

6.95

23.5 2.16 4.40

81.6

IDD

(wakeup

from

Stop 2)

Supply current

during

wakeup from

Stop 2 mode

bypass mode

Wakeup clock is

MSI = 32 MHz.

See(3).

3.0 V

320

1. Guaranteed based on test during characterization, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF

loading capacitors.

3. Wakeup with code execution from Flash memory. Average value given for a typical wakeup time as specified in Table 45.

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