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STM32WB50CG датащи(PDF) 18 Page - STMicroelectronics |
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STM32WB50CG датащи(HTML) 18 Page - STMicroelectronics |
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18 / 119 page ![]() Functional overview STM32WB50CG STM32WB30CE 18/119 DS13047 Rev 5 Secure Firmware update (especially BLE or 802.15.4) from system boot and over the air is provided. 3.6 RF subsystem The STM32WB50CG and STM32WB30CE embed an ultra-low power multi-standard radio Bluetooth® Low Energy (BLE) or 802.15.4 network processor, compliant with Bluetooth® specification 5.2 and IEEE® 802.15.4-2011. The BLE features 1 Mbps transfer rate, supports multiple roles simultaneously acting at the same time as BLE sensor and hub device, embeds Elliptic Curve Diffie-Hellman (ECDH) key agreement protocol, thus ensuring a secure connection. The BLE stack or 802.15.4 Low Level layer run on an embedded Arm® Cortex®-M0+ core (CPU2). The stack is stored on the embedded Flash memory, which is also shared with the Arm® Cortex®-M4 (CPU1) application, making it possible in-field stack update. 3.6.1 RF front-end block diagram The RF front-end is based on a direct modulation of the carrier in Tx, and uses a low IF architecture in Rx mode. Thanks to an internal transformer at RF pins, the circuit directly interfaces the antenna (single ended connection, impedance close to 50 Ω). The natural bandpass behavior of the internal transformer, simplifies outside circuitry aimed for harmonic filtering and out of band interferer rejection. In Transmit mode, the maximum output power is user selectable through the programmable LDO voltage of the power amplifier. A linearized, smoothed analog control offers clean power ramp-up. In receive mode the circuit can be used in standard high performance or in reduced power consumption (user programmable). The Automatic gain control (AGC) is able to reduce the chain gain at both RF and IF locations, for optimized interference rejection. Thanks to the use of complex filtering and highly accurate I/Q architecture, high sensitivity and excellent linearity can be achieved. The bill of material is reduced thanks to the high degree of integration. The radio frequency source is synthesized form an external 32 MHz crystal that does not need any external trimming capacitor network thanks to a dual network of user programmable integrated capacitors. |
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