STM32WB50CG datasheet(56/119 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32WB50CG STM32WB30CE

56/119

DS13047 Rev 5

Table 17. Current characteristics

Symbol

Ratings

Max

Unit

∑IVDD

Total current into sum of all VDD power lines (source)(1)

130

∑IVSS

Total current out of sum of all VSS ground lines (sink)(1)

130

IVDD(PIN)

Maximum current into each VDD power pin (source)(1)

100

IVSS(PIN)

Maximum current out of each VSS ground pin (sink)(1)

100

IIO(PIN)

Output current sunk by any I/O and control pin except FT_f

Output current sunk by any FT_f pin

Output current sourced by any I/O and control pin

∑IIO(PIN)

Total output current sunk by sum of all I/Os and control pins(2)

100

Total output current sourced by sum of all I/Os and control pins(2)

100

IINJ(PIN)(3)

Injected current on FT_xxx, TT_xx, RST and B pins, except PB0 and PB1

–5 / +0(4)

Injected current on PB0 and PB1

-5/0

∑|IINJ(PIN)|

Total injected current (sum of all I/Os and control pins)(5)

1. All main power (VDD, VDDRF, VDDA, VBAT) and ground (VSS) pins must always be connected to the external power

supply, in the permitted range.

2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be

sunk/sourced between two consecutive power supply pins referring to high pin count packages.

3. Positive injection (when VIN > VDD) is not possible on these I/Os and does not occur for input voltages lower than the

specified maximum value.

4. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer to Table 16 for the maximum allowed

input voltage values.

5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative

injected currents (instantaneous values).

Table 18. Thermal characteristics

Symbol

Ratings

Value

Unit

TSTG

Storage temperature range

–65 to +150

°C

Maximum junction temperature

110

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