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STM32WB50CG датащи(PDF) 63 Page - STMicroelectronics |
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STM32WB50CG датащи(HTML) 63 Page - STMicroelectronics |
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63 / 119 page ![]() DS13047 Rev 5 63/119 STM32WB50CG STM32WB30CE Electrical characteristics 110 6.3.5 Operating conditions at power-up / power-down The parameters given in Table 28 are derived from tests performed under the ambient temperature condition summarized in Table 20. 6.3.6 Embedded reset and power control block characteristics The parameters given in Table 29 are derived from tests performed under the ambient temperature conditions summarized in Table 20: General operating conditions. 1. Power consumption including RF subsystem and digital processing. Table 28. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - - ∞ µs/V VDD fall time rate 10 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 10 ∞ tVDDRF VDDRF rise time rate - - ∞ VDDRF fall time rate - ∞ Table 29. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.70 V Falling edge 1.60 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.10 2.14 Falling edge 1.96 2.00 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.10 2.15 2.19 Falling edge 2.00 2.05 2.10 VPVD1 PVD threshold 1 Rising edge 2.26 2.31 2.36 Falling edge 2.15 2.20 2.25 VPVD2 PVD threshold 2 Rising edge 2.41 2.46 2.51 Falling edge 2.31 2.36 2.41 |
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