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FXOS8700CQ датащи(PDF) 12 Page - Freescale Semiconductor, Inc |
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FXOS8700CQ датащи(HTML) 12 Page - Freescale Semiconductor, Inc |
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12 / 86 page ![]() Sensors 12 Freescale Semiconductor, Inc. 4.5 Absolute maximum ratings Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. SCL, SDA pin leakage 25°C 1.0 nA -40°C to 85°C 4.0 SCL, SDA pin capacitance 3pf BW 3 dB signal bandwidth Magnetic or acceleration mode ODR/3 Hz BW Signal bandwidth Hybrid mode ODR/6 Hz Power-on ramp time 0.001 1000 mSec BT Boot time(1) 900 1000 μs Turn-on time(2) 2/ODR + 1 ms Turn-on time(3) 2/ODR + 2 ms Top Operating temperature range -40 +85 °C 1. Time from VDDIO on and VDD > VDD min until I2C ready for operation. 2. Time to obtain valid data from Standby mode to Active mode. 3. Time to obtain valid data from power-down condition. Table 6. Maximum ratings Rating Symbol Value Unit Maximum acceleration (all axes, 100 μs) gmax 5,000 g Supply voltage, IO voltage VDD -0.3 to +3.6 V Input voltage on any control pin (SA0/MISO, SA1/CS_B, SCL/SCLK, SDA/MOSI, RST) Vin -0.3 to VDDIO + 0.3 V Drop-Test height Ddrop 1.8 M Maximum exposed magnetic field without perming (sensor characteristics may be restored using the magnetic reset de-gauss function) 10,000 μT Maximum exposed field without permanent damage 0.1 T Storage temperature range TSTG -40 to +125 °C Table 7. ESD and latchup protection characteristics Rating Symbol Value Unit Human Body Model HBM ±2000 V Machine Model MM ±200 V Charge Device Model CDM ±500 V Latchup current at T = 85°C ±100 mA Table 5. Electrical characteristics @ VDD = 2.5V, VDDIO = 1.8V T = 25°C unless otherwise noted. This device is sensitive to ESD, improper handling can cause permanent damage to the part. |
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