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M16C/1N датащи(PDF) 180 Page - Renesas Technology Corp |
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M16C/1N датащи(HTML) 180 Page - Renesas Technology Corp |
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180 / 238 page ![]() Rev.1.00 Oct 20, 2004 page 168 of 222 M16C/1N Group 18. Electrical Characteristics REJ09B0007-0100Z Table 18.6 Flash memory version electrical characteristics (Unless otherwise noted: Vcc = 4.2 to 5.5 V, Topr= 0 to 60oC) Block erasing time 2Kbyte block 8Kbyte block µs s s 9 600 9 0.2 75 cycle 100 (Note 3) year 10 0.4 16Kbyte block s 9 0.7 32Kbyte block s 9 1.2 Word programming time Data retention Erase/write cycle (Note 2) td(SR-ES) Erasure-suspend request (Interrupt request) FMR46 Min. Typ. (Note 1) Max. td(SR-ES) - - - - ms 20 Symbol Parameter Unit Standard Transition time from erasure operation to erase-suspend Note1: Vcc=5.0V, Topr=25˚C Note2: Definition of Programming and erasure times The Programming and erasure times are defined to be per-block erasure times. For example a case where a 2K- byte block is programmed in 1,024 operations by writing one word at a time and erased thereafter. Performing multiple programs to the same address before an erase operation is prohibited. Note 3: Minimum number of programming/erasure for which operation is guaranteed. |
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