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M16C/1N датащи(PDF) 180 Page - Renesas Technology Corp

номер детали M16C/1N
подробное описание детали  RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/10 SERIES
PDF  238 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

M16C/1N датащи(HTML) 180 Page - Renesas Technology Corp

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Rev.1.00
Oct 20, 2004
page 168 of 222
M16C/1N Group
18. Electrical Characteristics
REJ09B0007-0100Z
Table 18.6 Flash memory version electrical characteristics
(Unless otherwise noted: Vcc = 4.2 to 5.5 V, Topr= 0 to 60oC)
Block erasing time
2Kbyte block
8Kbyte block
µs
s
s
9
600
9
0.2
75
cycle
100 (Note 3)
year
10
0.4
16Kbyte block
s
9
0.7
32Kbyte block
s
9
1.2
Word programming time
Data retention
Erase/write cycle (Note 2)
td(SR-ES)
Erasure-suspend
request
(Interrupt request)
FMR46
Min.
Typ. (Note 1)
Max.
td(SR-ES)
-
-
-
-
ms
20
Symbol
Parameter
Unit
Standard
Transition time from erasure operation
to erase-suspend
Note1: Vcc=5.0V, Topr=25˚C
Note2: Definition of Programming and erasure times
The Programming and erasure times are defined to be per-block erasure times. For example a case where a 2K-
byte block is programmed in 1,024 operations by writing one word at a time and erased thereafter. Performing
multiple programs to the same address before an erase operation is prohibited.
Note 3: Minimum number of programming/erasure for which operation is guaranteed.



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