| поискавой системы для электроныых деталей |
|
STM32H533CE датащи(PDF) 127 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32H533CE датащи(HTML) 127 Page - STMicroelectronics |
|
127 / 231 page ![]() DS14539 Rev 1 127/231 STM32H533xx Electrical characteristics 200 5.3.11 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (electromagnetic susceptibility) While a simple application is executed (toggling two LEDs through I/O ports), the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: • Electrostatic discharge (ESD), positive and negative, is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard. • FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard. A device reset allows to resume normal operation. The test results are given in Table 52. They are based on the EMS levels and classes defined in AN1709 “EMC design guide for STM8, STM32 and legacy MCUs”. 2. Data is evaluated with a write of 50% of the programmed bits equal to 0. Table 50. Flash memory programming(1) 1. Data are valid for program memory and high-cycling data memory. Symbol Parameter Conditions Min(2) 2. Specified by design - Not tested in production. Typ Max(2) Unit tprog Word program time 128 bits (user area) - 32 100 µs 16 bits (OTP area) - 32 100 tERASE Sector erase time (8 Kbytes) - - 2 10 ms tME Mass erase time - 0.52 2.6 s Vprog Programming voltage 1.71 - 3.6 V Table 51. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) Unit NPEND Endurance program memory TJ = -40 to +130 °C 10 kcycles NDEND Endurance data memory TJ = -40 to +130 °C 100 tPRET Program memory, data retention 1 kcycle at TA = 125 °C 10 Years 1 kcycles at TA = 85 °C 30 10 kcycles at TA = 55 °C 30 tDRET Data retention for data memory 100 kcycle at TA = 125 °C 1 100 kcycles at TA = 85 °C 10 100 kcycles at TA = 55 °C 10 1. Evaluated by characterization - Not tested in production, unless otherwise specified. |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |