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STM32H533CE датащи(PDF) 127 Page - STMicroelectronics

номер детали STM32H533CE
подробное описание детали  Arm® Cortex®-M33 32-bit MCUTrustZone® FPU, 375 DMIPS 250 MHz, 512-Kbyte flash, 272-Kbyte RAM, cryptography
PDF  231 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32H533CE датащи(HTML) 127 Page - STMicroelectronics

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DS14539 Rev 1
127/231
STM32H533xx
Electrical characteristics
200
5.3.11
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed (toggling two LEDs through I/O ports), the device is
stressed by two electromagnetic events until a failure occurs. The failure is indicated by the
LEDs:
Electrostatic discharge (ESD), positive and negative, is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows to resume normal operation.
The test results are given in Table 52. They are based on the EMS levels and classes
defined in AN1709 “EMC design guide for STM8, STM32 and legacy MCUs”.
2. Data is evaluated with a write of 50% of the programmed bits equal to 0.
Table 50. Flash memory programming(1)
1. Data are valid for program memory and high-cycling data memory.
Symbol
Parameter
Conditions
Min(2)
2. Specified by design - Not tested in production.
Typ
Max(2)
Unit
tprog
Word program time
128 bits (user area)
-
32
100
µs
16 bits (OTP area)
-
32
100
tERASE
Sector erase time (8 Kbytes)
-
-
2
10
ms
tME
Mass erase time
-
0.52
2.6
s
Vprog
Programming voltage
1.71
-
3.6
V
Table 51. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
Unit
NPEND Endurance program memory
TJ = -40 to +130 °C
10
kcycles
NDEND Endurance data memory
TJ = -40 to +130 °C
100
tPRET
Program memory, data retention
1 kcycle at TA = 125 °C
10
Years
1 kcycles at TA = 85 °C
30
10 kcycles at TA = 55 °C
30
tDRET
Data retention for data memory
100 kcycle at TA = 125 °C
1
100 kcycles at TA = 85 °C
10
100 kcycles at TA = 55 °C
10
1. Evaluated by characterization - Not tested in production, unless otherwise specified.



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