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STM32H533CE датащи(PDF) 123 Page - STMicroelectronics

номер детали STM32H533CE
подробное описание детали  Arm® Cortex®-M33 32-bit MCUTrustZone® FPU, 375 DMIPS 250 MHz, 512-Kbyte flash, 272-Kbyte RAM, cryptography
PDF  231 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32H533CE датащи(HTML) 123 Page - STMicroelectronics

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DS14539 Rev 1
123/231
STM32H533xx
Electrical characteristics
200
64 MHz high-speed internal RC oscillator (HSI)
ACCHSI48_REL(3)
Accuracy of the HSI48 oscillator over
temperature (reference is 30 °C)
TJ = -40 to 130 °C
-4.5
-
4
%
∆VDD(HSI48)
HSI48 oscillator frequency drift with
VDD (reference is 3.3 V)
VDD = 3.0 to 3.6 V
-
0.025
0.05
%
VDD = 1.71 to 3.6 V
-
0.05
0.1
tsu(HSI48)(3)
HSI48 oscillator start-up time
-
-
2.1
4.0
μs
IDD(HSI48)(3)
HSI48 oscillator power consumption
-
-
350
400
μA
NT jitter(3)
Next transition jitter accumulated
jitter on 28 cycles
--
±0.15
-
ns
PT jitter(3)
Paired transition jitter accumulated
jitter on 56 cycles(4)
--
±0.25
-
1. Calibrated during manufacturing tests.
2. Evaluated by characterization - Not tested in production.
3. Specified by design - Not tested in production.
4. Jitter measurements are performed without clock sources activated in parallel.
Table 43. HSI48 oscillator characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 44. HSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
VDD = 3.3 V, TJ = 30 °C
63.7(2) 64.0(2) 64.3(2) MHz
TRIM
User trimming step
Trimming is not a multiple of 32(3)
-
0.24
0.32
%
Trimming is 128, 256, and 384(3)
-5.2
-1.8
-
Trimming is 64, 192, 320, and 488(3)
-1.4
-0.8
-
Other trimmings are multiples of 32 (not
including multiples of 64 and 128)(3)
-0.6
-0.25
-
DuCy(HSI) Duty cycle
-
45
-
55
%
∆VDD(HSI)
Frequency drift with VDD
(reference is 3.3 V)
VDD= 1.71 to 3.6 V
-0.12
-
0.03
%
∆TEMP(HSI)
Frequency drift over
temperature (reference
is 64 MHz)
TJ= -20 to 105 °C
-1(4)
-1(4)
TJ= -40 to 130 °C
-2(4)
-1(4)
tsu(HSI)
Start-up time
-
-
1.4
2.0
μs
tstab(HSI) Stabilization time
At 1% of target frequency
-
4
8
μs
At 1% of target frequency
-
-
4
IDD(HSI)
Power consumption
-
-
300
450
μA
1. Specified by design - Not tested in production, unless otherwise specified.
2. Calibrated during manufacturing tests.
3. Trimming value of HSICAL[8:0.]
4. Guaranteed by characterization - Not tested n production.



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