STM32H533CE datasheet(124/231 Pages) STMICROELECTRONICS

номер детали	STM32H533CE

подробное описание детали	Arm® Cortex®-M33 32-bit MCUTrustZone® FPU, 375 DMIPS 250 MHz, 512-Kbyte flash, 272-Kbyte RAM, cryptography

PDF	231 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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Electrical characteristics

STM32H533xx

124/231

DS14539 Rev 1

4 MHz low-power internal RC oscillator (CSI)

Low-speed internal (LSI) RC oscillator

Table 45. CSI oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fCSI

Frequency

VDD = 3.3 V, TJ = 30 °C

3.96(2)

44.04(2)

MHz

TRIM

User trimming step

Trimming is not a multiple of 16

0.40

0.75

Trimming is not a multiple of 32

-4.75

-2.75

0.75

Other trimmings are a multiple of 32

(not including multiples of 64 and 128)

-0.43

0.00

0.75

DuCy(CSI)

Duty cycle

∆TEMP(CSI)

Frequency drift over

temperature

TJ= 0 to 85 °C

-3.7(3)

-4.5(3)

TJ= -40 to TJ = 130 °C

-11(3)

-7.5(3)

∆VDD(CSI)

Frequency drift over VDD VDD= 1.71 to 3.6 V

-0.06

0.06

tsu(CSI)

Start-up time

μs

tstab(CSI)

Stabilization time

(to reach ± 3% of fCSI)

cycle

IDD(CSI)

Power consumption

μA

1. Specified by design - Not tested in production, unless otherwise specified.

2. Calibrated during manufacturing tests.

3. Evaluated by characterization - Not tested in production.

Table 46. LSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fLSI

Frequency

VDD = 3.3 V, TJ = 25 °C

31.4(1)

32.6(1)

kHz

TJ = -40 to 110 °C, VDD =1.71 to 3.6 V

29.76(2)

-33.6(2)

TJ = -40 to 130 °C, VDD =1.71 to 3.6 V

29.4(2)

-33.6(2)

tsu(LSI)(3)

Start-up time

130

μs

tstab(LSI)(3)

Stabilization time

(5% of final value)

120

170

IDD(LSI)(3) Power consumption

130

280

1. Calibrated during manufacturing tests.

2. Evaluated by characterization - Not tested in production.

3. Specified by design - Not tested in production.

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